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14KESD6.5 Datasheet (PDF) - Microsemi Corporation

14KESD6.5 Datasheet PDF - Microsemi Corporation
Part # 14KESD6.5
Download  14KESD6.5 Download

File Size   195.76 Kbytes
Page   4 Pages
Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation
Description AXIAL-LEAD TVS

14KESD6.5 Datasheet (PDF)

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14KESD6.5 Datasheet PDF - Microsemi Corporation

Part # 14KESD6.5
Download  14KESD6.5 Click to download

File Size   195.76 Kbytes
Page   4 Pages
Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation
Description AXIAL-LEAD TVS

14KESD6.5 Datasheet (HTML) - Microsemi Corporation

14KESD6.5 Datasheet HTML 1Page - Microsemi Corporation 14KESD6.5 Datasheet HTML 2Page - Microsemi Corporation 14KESD6.5 Datasheet HTML 3Page - Microsemi Corporation 14KESD6.5 Datasheet HTML 4Page - Microsemi Corporation

14KESD6.5 Product details

DESCRIPTION
These small axial-leaded TVS devices feature the ability to clamp dangerous high voltage, short-term transients such as produced by directed or radiated electrostatic discharge phenomena before entering sensitive component regions of a circuit design. They are small economical transient voltage suppressors targeted primarily for short-term transients below a few microseconds while still achieving significant peak-pulse-power capability as illustrated in Figure #1.

FEATURES
• Excellent protection in clamping direct ESD level transients in excess of 40,000 V per MIL-STD-750, Method 1020 (approx. 150 ns exponential wave)
• Absorbs ESD level transients* of 14,000 Watts per MIL-STD-750, Method 1020 (approximately 150 ns exponential wave, or one microsecond transients up to 4000 watts. See Figure #1 and #2 for overall transient Peak Pulse Power.
• Clamps Transients in less than 100 picoseconds
• Working Stand-off Voltage range of 5V to 170V
• Hermetic DO-41 Package. Also available in surface mount DO-213AB MELF package (see separate data sheet)

MAXIMUM RATINGS
• 4000 Watts for One Microsecond Square Wave or 14,000 watts per ESD Wave form of MIL-STD-750, method 1020.
• See Surge Rating curve in Figures #1 and 2.
• Operating and storage temperature –65oC to 175oC
• THERMAL RESISTANCE: Less than 83oC/Watt junction to lead at 0.375 inches from body.
• DC power dissipation 1500 mW at TL = 75oC at 3/8 inch (10 mm) lead length from body.
• Derate at 22.8 W/oC above 25oC for PPP (1µs) and at 15 mW/oC above 75oC for dc power.
• Forward Surge Current 500 amps for 1µs at TL = 25oC (rise time > 100 ns).




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About Microsemi Corporation


Microsemi Corporation was an American company that specialized in the design and manufacture of semiconductor and system solutions.
The company was founded in 1960 and was headquartered in Aliso Viejo, California.
Microsemi provided a wide range of products including analog and mixed-signal integrated circuits, field-programmable gate arrays (FPGAs), power management and control products, and other semiconductor solutions.
The company's products were used in various applications such as defense and security, aerospace and aviation, industrial, and communications.
Microsemi was known for its expertise in semiconductor technology and its ability to deliver high-quality and reliable products to its customers.
In 2018, Microsemi was acquired by Microchip Technology, a leading provider of microcontroller, mixed-signal, analog, and security products.
The Microsemi brand is no longer in use, but its technology and products continue to be a part of Microchip's portfolio.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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