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SST34HF1682C-70-4C-B1PE Datasheet (PDF) - Silicon Storage Technology, Inc

SST34HF1682C-70-4C-B1PE Datasheet PDF - Silicon Storage Technology, Inc
Part # SST34HF1682C-70-4C-B1PE
Download  SST34HF1682C-70-4C-B1PE Download

File Size   488.09 Kbytes
Page   38 Pages
Manufacturer  SST [Silicon Storage Technology, Inc]
Direct Link  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc
Description 16 Mbit Concurrent SuperFlash 2/4/8 Mbit SRAM ComboMemory

SST34HF1682C-70-4C-B1PE Datasheet (PDF)

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SST34HF1682C-70-4C-B1PE Datasheet PDF - Silicon Storage Technology, Inc

Part # SST34HF1682C-70-4C-B1PE
Download  SST34HF1682C-70-4C-B1PE Click to download

File Size   488.09 Kbytes
Page   38 Pages
Manufacturer  SST [Silicon Storage Technology, Inc]
Direct Link  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc
Description 16 Mbit Concurrent SuperFlash 2/4/8 Mbit SRAM ComboMemory

SST34HF1682C-70-4C-B1PE Datasheet (HTML) - Silicon Storage Technology, Inc

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SST34HF1682C-70-4C-B1PE Product details

PRODUCT DESCRIPTION
The SST34HF16x2C/D/S ComboMemory devices integrate either a 1M x16 or 2M x8 CMOS flash memory bank with either a 128K x16/256K x8, 256K x16/512 x8, or 512K x16/1024K x8 CMOS SRAM or pseudo SRAM (PSRAM) memory bank in a multi-chip package (MCP). These devices are fabricated using SST’s proprietary, high-performance CMOS SuperFlash technology incorporating the split-gate cell design and thick-oxide tunneling injector to attain better reliability and manufacturability compared with alternate approaches. The SST34HF16x2C/D/S devices are ideal for applications such as cellular phones, GPS devices, PDAs, and other portable electronic devices in a low power and small form factor system.

FEATURES:
• Flash Organization: 1M x16 or 2M x8
• Dual-Bank Architecture for Concurrent Read/Write Operation
   – 16 Mbit: 4 Mbit + 12 Mbit
• (P)SRAM Organization:
   – 2 Mbit: 128K x16 or 256K x8
   – 4 Mbit: 256K x16 or 512K x8
   – 8 Mbit: 512K x16 or 1024K x8
• Single 2.7-3.3V Read and Write Operations
• Superior Reliability
   – Endurance: 100,000 Cycles (typical)
   – Greater than 100 years Data Retention
• Low Power Consumption:
   – Active Current: 25 mA (typical)
   – Standby Current: 20 µA (typical)
• Hardware Sector Protection (WP#)
   – Protects 4 outer most sectors (4 KWord) in the larger bank by holding WP# low and unprotects by holding WP# high
• Hardware Reset Pin (RST#)
   – Resets the internal state machine to reading data array
• Byte Selection for Flash (CIOF pin)
   – Selects 8-bit or 16-bit mode
• Sector-Erase Capability
   – Uniform 2 KWord sectors
• Block-Erase Capability
   – Uniform 32 KWord blocks
• Read Access Time
   – Flash: 70 ns
   – (P)SRAM: 70 ns
• Erase-Suspend / Erase-Resume Capabilities
• Security ID Feature
   – SST: 128 bits
   – User: 128 bits
• Latched Address and Data
• Fast Erase and Word-/Byte-Program (typical):
   – Sector-Erase Time: 18 ms
   – Block-Erase Time: 18 ms
   – Chip-Erase Time: 35 ms
   – Word-Program Time: 7 µs
• Automatic Write Timing
   – Internal VPP Generation
• End-of-Write Detection
   – Toggle Bit
   – Data# Polling
   – Ready/Busy# pin
• CMOS I/O Compatibility
• JEDEC Standard Command Set
• Packages Available
   – 56-ball LFBGA (8mm x 10mm)
   – 62-ball LFBGA (8mm x 10mm)



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About Silicon Storage Technology, Inc


Silicon Storage Technology, Inc. (SST) was an American technology company that specialized in the design and manufacture of non-volatile memory solutions, including flash memory and microcontrollers.
The company was founded in 1991 and had its headquarters in Sunnyvale, California.
SST was known for its innovative technology and high-quality products, and it had a strong reputation in the memory and storage industry.
In 2010, SST was acquired by Microchip Technology Inc., a leading provider of microcontroller and analog semiconductors.
Today, SST operates as a subsidiary of Microchip and continues to provide non-volatile memory solutions for a variety of applications.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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