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AS7C33256NTF18B-75TQIN Datasheet (PDF) - Alliance Semiconductor Corporation

AS7C33256NTF18B-75TQIN Datasheet PDF - Alliance Semiconductor Corporation
Part # AS7C33256NTF18B-75TQIN
Download  AS7C33256NTF18B-75TQIN Download

File Size   427.51 Kbytes
Page   18 Pages
Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation
Description 3.3V 256K x 18 Flowthrough Synchronous SRAM with NTD

AS7C33256NTF18B-75TQIN Datasheet (PDF)

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AS7C33256NTF18B-75TQIN Datasheet PDF - Alliance Semiconductor Corporation

Part # AS7C33256NTF18B-75TQIN
Download  AS7C33256NTF18B-75TQIN Click to download

File Size   427.51 Kbytes
Page   18 Pages
Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation
Description 3.3V 256K x 18 Flowthrough Synchronous SRAM with NTD

AS7C33256NTF18B-75TQIN Datasheet (HTML) - Alliance Semiconductor Corporation

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AS7C33256NTF18B-75TQIN Product details

Functional description
The AS7C33128PFS32B and AS7C33128PFS36B are high-performance CMOS 4-Mbit synchronous Static Random Access Memory (SRAM) devices organized as 131,072 words × 32 or 36 bits, and incorporate a two-stage register-register pipeline for highest frequency on any given technology.

Features
• Organization: 131,072 words × 32 or 36 bits
• Fast clock speeds to 200 MHz
• Fast clock to data access: 3.0/3.5/4.0 ns
• Fast OE access time: 3.0/3.5/4.0 ns
• Fully synchronous register-to-register operation
• Single-cycle deselect
• Asynchronous output enable control
• Available in 100-pin TQFP package
• Individual byte write and global write
• Multiple chip enables for easy expansion
• 3.3V core power supply
• 2.5V or 3.3V I/O operation with separate VDDQ
• Linear or interleaved burst control
• Snooze mode for reduced power-standby
• Common data inputs and data outputs




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