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AS29LV160 Datasheet (PDF) - Alliance Semiconductor Corporation

AS29LV160 Datasheet PDF - Alliance Semiconductor Corporation
Part # AS29LV160
Download  AS29LV160 Download

File Size   561.88 Kbytes
Page   29 Pages
Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation
Description 3W 2M x 8 / 1M x 16 - CMOS Flash EEPROM

AS29LV160 Datasheet (PDF)

Go To PDF Page Download Datasheet
AS29LV160 Datasheet PDF - Alliance Semiconductor Corporation

Part # AS29LV160
Download  AS29LV160 Click to download

File Size   561.88 Kbytes
Page   29 Pages
Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation
Description 3W 2M x 8 / 1M x 16 - CMOS Flash EEPROM

AS29LV160 Datasheet (HTML) - Alliance Semiconductor Corporation

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AS29LV160 Product details

Features
• Organization: 2M×8 / 1M×16
• Sector architecture
   - One 16K; two 8K; one 32K; and thirty-one 64K byte sectors
   - One 8K; two 4K; one 16K; and thirty-one 32K word sectors
   - Boot code sector architecture—T (top) or B (bottom)
   - Erase any combination of sectors or full chip
• Single 2.7-3.6V power supply for read/write operations
• Sector protection
• High speed 70/80/90/120 ns address access time
• Automated on-chip programming algorithm
   - Automatically programs/verifies data at specified address
• Automated on-chip erase algorithm
   - Automatically preprograms/erases chip or specified sectors
• Hardware RESET pin
   - Resets internal state machine to read mode
• Low power consumption
   - 200 nA typical automatic sleep mode current
   - 200 nA typical standby current
   - 10 mA typical read current
• JEDEC standard software, packages and pinouts
   - 48-pin TSOP
   - 44-pin SO (availability TBD)
• CFI (Common Flash Interface) compliant
• Detection of program/erase cycle completion
   - DQ7 DATA polling
   - DQ6 toggle bit
   - RY/BY output
• Erase suspend/resume
   - Supports reading data from or programming data to a sector not being erased
• Low VCC write lock-out below 1.5V
• 10 year data retention at 150C
• 100,000 write/erase cycle endurance




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