Manufacturer | Part # | Datasheet | Description |
California Eastern Labs |
NE552R479A-T1-A
|
605Kb / 7P |
3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS
|
NE5531079A
|
382Kb / 8P |
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
|
Renesas Technology Corp |
NE5531079A
|
240Kb / 11P |
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
|
NEC |
5510279A
|
390Kb / 4P |
3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
|
California Eastern Labs |
NE5510279A
|
42Kb / 5P |
3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
|
NE5510179A
|
42Kb / 4P |
3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS
|
NEC |
NE5510279A
|
39Kb / 5P |
3.5V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
|
California Eastern Labs |
NE5500179A
|
43Kb / 5P |
4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND GSM1900 TRANSMISSION AMPLIFIERS
|
NE5511279A
|
296Kb / 4P |
7.5 V UHF BAND RF POWER SILICON LD-MOS FET
|
NEC |
NE5510179A
|
39Kb / 4P |
3.5V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS
|