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HX6408-VHN Datasheet (PDF) - Honeywell Solid State Electronics Center

HX6408-VHN Datasheet PDF - Honeywell Solid State Electronics Center
Part # HX6408-VHN
Download  HX6408-VHN Download

File Size   167.39 Kbytes
Page   11 Pages
Manufacturer  HONEYWELL [Honeywell Solid State Electronics Center]
Direct Link  http://honeywell.com/Pages/Home.aspx
Logo HONEYWELL - Honeywell Solid State Electronics Center
Description 512k x 8 STATIC RAM

HX6408-VHN Datasheet (PDF)

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HX6408-VHN Datasheet PDF - Honeywell Solid State Electronics Center

Part # HX6408-VHN
Download  HX6408-VHN Click to download

File Size   167.39 Kbytes
Page   11 Pages
Manufacturer  HONEYWELL [Honeywell Solid State Electronics Center]
Direct Link  http://honeywell.com/Pages/Home.aspx
Logo HONEYWELL - Honeywell Solid State Electronics Center
Description 512k x 8 STATIC RAM

HX6408-VHN Datasheet (HTML) - Honeywell Solid State Electronics Center

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HX6408-VHN Product details

The 512K x 8 Radiation Hardened Static RAM is a high performance 524,288 word x 8-bit static random access memory with optional industry-standard functionality. It is fabricated with Honeywell’s radiation hardened Silicon On Insulator (SOI) technology, and is designed for use in low voltage systems operating in radiation environments. The RAM operates over the full military temperature range and requires only a single 3.3 V ± 0.3V power supply. Power consumption is typically <30 mW @ 1MHz in write mode, <14 mW @ 1MHz in read mode, and is less than 5 mW when in standby mode.

FEATURES
◾ Fabricated with RICMOS™ V Silicon On Insulator (SOI)
◾ 0.35 mm Process (Leff = 0.28 µm)
◾ Total Dose ≥ 3x105 and 1X106 rad(SiO2)
◾ Neutron ≥1x1014 cm-2
◾ Dynamic and Static Transient Upset ≥1x1010 rad(Si)/s (3.3 V)
◾ Dose Rate Survivability ≥1x1012 rad(Si)/s
◾ Soft Error Rate ≤1x10-10 Upsets/bit-day (3.3 V)
◾ No Latchup
◾ Read/Write Cycle Times ≤20 ns, (3.3 V), -55 to 125°C
◾ Typical Operating Power (3.3 V)
    <14 mW @ 1MHz Read
    <30 mW @ 1MHz Write
    <5 mW Standby mode
◾ Asynchronous Operation
◾ CMOS Compatible I/O
◾ Single Power Supply, 3.3 V ± 0.3 V
◾ Operating Range is -55°C to +125°C
◾ 36-Lead Flat Pack Package
◾ Optional Low Power Sleep Mode




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About Honeywell Solid State Electronics Center


Honeywell Solid State Electronics Center (SSEC) was a research and development facility of Honeywell Inc. that operated from 1957 to 1993 in Minneapolis, Minnesota, United States. The center was dedicated to the research, development, and production of solid-state electronics, including microelectronics, semiconductors, and related technologies.

During its operation, SSEC made significant contributions to the advancement of the semiconductor industry, particularly in the areas of integrated circuits, transistor design, and fabrication processes. Notable accomplishments of SSEC include the development of the first silicon transistor, the first commercial silicon planar transistor, and the first integrated circuit to use metal oxide semiconductor (MOS) technology.

In 1993, Honeywell closed the SSEC facility as part of a broader restructuring of its operations. The company's semiconductor business was subsequently sold to SGS-Thomson (now STMicroelectronics) in 1999.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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