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HY57V561620CLT-6 Datasheet (PDF) - Hynix Semiconductor

HY57V561620CLT-6 Datasheet PDF - Hynix Semiconductor
Part # HY57V561620CLT-6
Download  HY57V561620CLT-6 Download

File Size   217.72 Kbytes
Page   12 Pages
Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor
Description 4 Banks x 4M x 16Bit Synchronous DRAM

HY57V561620CLT-6 Datasheet (PDF)

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HY57V561620CLT-6 Datasheet PDF - Hynix Semiconductor

Part # HY57V561620CLT-6
Download  HY57V561620CLT-6 Click to download

File Size   217.72 Kbytes
Page   12 Pages
Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor
Description 4 Banks x 4M x 16Bit Synchronous DRAM

HY57V561620CLT-6 Datasheet (HTML) - Hynix Semiconductor

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HY57V561620CLT-6 Product details

DESCRIPTION
The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16.
HY57V561620C is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchro nized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output voltage levels are compatible with LVTTL.
Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write cycles initiated by a single control command (Burst length of 1,2,4,8 or full page), and the burst count sequence(sequential or interleave). A burst of read or write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new burst read or write command on any cycle. (This pipelined design is not restricted by a `2N` rule.)

FEATURES
• Single 3.3±0.3V power supply
• All device pins are compatible with LVTTL interface
• JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin
   pitch
• All inputs and outputs referenced to positive edge of system clock
• Data mask function by UDQM, LDQM
• Internal four banks operation
• Auto refresh and self refresh
• 8192 refresh cycles / 64ms
• Programmable Burst Length and Burst Type
   - 1, 2, 4, 8 or Full page for Sequential Burst
   - 1, 2, 4 or 8 for Interleave Burst
• Programmable CAS Latency ; 2, 3 Clocks
• Ambient Temperature: -40~85°C




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About Hynix Semiconductor


Hynix Semiconductor is a South Korean company that specializes in the design and manufacture of memory semiconductors.
The company was founded in 1983 and is headquartered in Icheon, South Korea.
Hynix is one of the world's leading producers of DRAM (dynamic random access memory) and NAND flash memory, which are used in various applications such as computer systems, mobile devices, and solid-state drives.
Hynix is known for its expertise in memory semiconductor technology and its ability to deliver high-quality and high-performance memory products to its customers.
The company has operations and facilities in various countries across the world and works closely with its customers to provide customized memory solutions that meet their specific requirements and needs.
In addition to its memory products, Hynix also provides a range of products and solutions for the automotive and data center markets, such as system-on-a-chip (SoC) products and high-bandwidth memory (HBM) products.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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