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SST36VF1602C-70-4C-B3KE Datasheet (PDF) - Silicon Storage Technology, Inc

SST36VF1602C-70-4C-B3KE Datasheet PDF - Silicon Storage Technology, Inc
Part # SST36VF1602C-70-4C-B3KE
Download  SST36VF1602C-70-4C-B3KE Download

File Size   422.01 Kbytes
Page   34 Pages
Manufacturer  SST [Silicon Storage Technology, Inc]
Direct Link  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc
Description 16 Mbit (x8/x16) Dual-Bank Flash Memory

SST36VF1602C-70-4C-B3KE Datasheet (PDF)

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SST36VF1602C-70-4C-B3KE Datasheet PDF - Silicon Storage Technology, Inc

Part # SST36VF1602C-70-4C-B3KE
Download  SST36VF1602C-70-4C-B3KE Click to download

File Size   422.01 Kbytes
Page   34 Pages
Manufacturer  SST [Silicon Storage Technology, Inc]
Direct Link  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc
Description 16 Mbit (x8/x16) Dual-Bank Flash Memory

SST36VF1602C-70-4C-B3KE Datasheet (HTML) - Silicon Storage Technology, Inc

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SST36VF1602C-70-4C-B3KE Product details

PRODUCT DESCRIPTION

The SST36VF1601C and SST36VF1602C are 1M x16 or 2M x8 CMOS Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS Super Flash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The devices write (Program or Erase) with a 2.7-3.6V power supply and conform to JEDEC standard pinouts for x8/x16 memories.



FEATURES:

• Organized as 1M x16 or 2M x8

• Dual Bank Architecture

– 16 Mbit Bottom Sector Protection

- SST36VF1601C: 12 Mbit + 4 Mbit

– 16 Mbit Top Sector Protection

- SST36VF1602C: 4 Mbit + 12 Mbit

• Single 2.7-3.6V for Read and Write Operations

• Superior Reliability

– Endurance: 100,000 cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption:

– Active Current: 6 mA typical

– Standby Current: 4 µA typical

– Auto Low Power Mode: 4 µA typical

• Hardware Sector Protection/WP# Input Pin

– Protects the 4 outermost sectors (8 KWord) in the larger bank bydriving WP# low and unprotects by driving WP# high

• Hardware Reset Pin (RST#)

– Resets the internal state machine to reading array data

• Byte# Pin

– Selects 8-bit or 16-bit mode

• Sector-Erase Capability

– Uniform 2 KWord sectors

• Chip-Erase Capability

• Block-Erase Capability

– Uniform 32 KWord blocks

• Erase-Suspend / Erase-Resume Capabilities

• Security ID Feature

– SST: 128 bits

– User: 128 bits

• Fast Read Access Time

– 70 ns

• Latched Address and Data

• Fast Erase and Program (typical):

– Sector-Erase Time: 18 ms

– Block-Erase Time: 18 ms

– Chip-Erase Time: 35 ms

– Program Time: 7 µs

• Automatic Write Timing

– Internal VPPGeneration

• End-of-Write Detection

– Toggle Bit

– Data# Polling

– Ready/Busy# pin

• CMOS I/O Compatibility

• Conforms to Common Flash Memory Interface (CFI)

• JEDEC Standards

– Flash EEPROM Pinouts and command sets

• Packages Available

– 48-ball TFBGA (6mm x 8mm)

– 48-lead TSOP (12mm x 20mm)

– Non-Pb (lead-free) packages available

• All non-Pb (lead-free) devices are RoHS compliant



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About Silicon Storage Technology, Inc


Silicon Storage Technology, Inc. (SST) was an American technology company that specialized in the design and manufacture of non-volatile memory solutions, including flash memory and microcontrollers.
The company was founded in 1991 and had its headquarters in Sunnyvale, California.
SST was known for its innovative technology and high-quality products, and it had a strong reputation in the memory and storage industry.
In 2010, SST was acquired by Microchip Technology Inc., a leading provider of microcontroller and analog semiconductors.
Today, SST operates as a subsidiary of Microchip and continues to provide non-volatile memory solutions for a variety of applications.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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