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NAND256W4M5AZB5E Datasheet (PDF) - STMicroelectronics

NAND256W4M5AZB5E Datasheet PDF - STMicroelectronics
Part # NAND256W4M5AZB5E
Download  NAND256W4M5AZB5E Download

File Size   228.19 Kbytes
Page   23 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP

NAND256W4M5AZB5E Datasheet (PDF)

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NAND256W4M5AZB5E Datasheet PDF - STMicroelectronics

Part # NAND256W4M5AZB5E
Download  NAND256W4M5AZB5E Click to download

File Size   228.19 Kbytes
Page   23 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP

NAND256W4M5AZB5E Datasheet (HTML) - STMicroelectronics

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NAND256W4M5AZB5E Product details

Summary description
The NAND256-M, NAND512-M and NAND01G-M are Multi-Chip Packages which combine up to 512 Mbit LPSDRAM with a 256 Mbit, 512 Mbit or 1 Gbit NAND Flash memory. This combination of LPSDRAM and NAND Flash can result in up to 1 Gbit of memory.

Features
■ Multi-Chip Packages
    – 1 die of 256 Mb, 512 Mb (x8/ x16) NAND Flash + 1 die of 256 Mb (x16) SDR LPSDRAM
    – 1 die of 256 Mb, 512 Mb (x8/ x16) NAND Flash + 2 dice of 256 Mb (x16) SDR LPSDRAMs
    – 1 die of 256 Mb, 512 Mb (x8/ x16) NAND Flash +1 die of 256 Mb (x16) DDR LPSDRAM
    – 1 die of 512 Mb (x16) NAND Flash + 1 die of 256 Mb or 512 Mb (x16) DDR LPSDRAM
■ Supply voltages
    – VDDF = 1.7V to 1.95V or 2.5V to 3.6V
    – VDDD = VDDQD = 1.7V to 1.9V
■ Electronic Signature
■ ECOPACK® packages
■ Temperature range
    – -30 to 85°C

Flash Memory
■ NAND Interface
    – x8 or x16 bus width
    – Multiplexed Address/ Data
■ Page size
    – x8 device: (512 + 16 spare) Bytes
    – x16 device: (256 + 8 spare) Words
■ Block size
    – x8 device: (16K + 512 spare) Bytes
    – x16 device: (8K + 256 spare) Words
■ Page Read/Program
    – Random access: 15µs (max)
    – Sequential access: 50ns (min)
    – Page program time: 200µs (typ)
■ Copy Back Program mode
    – Fast page copy without external buffering
■ Fast Block Erase
    – Block erase time: 2ms (typ)
■ Status Register
■ Data integrity
    – 100,000 Program/Erase cycles
    – 10 years Data Retention

LPSDRAM
■ Interface: x16 or x 32 bus width
■ Deep Power Down mode
■ 1.8v LVCMOS interface
■ Quad internal Banks controlled by BA0 and BA1
■ Automatic and controlled Precharge
■ Auto Refresh and Self Refresh
    – 8,192 Refresh cycles/64ms
    – Programmable Partial Array Self Refresh
    – Auto Temperature Compensated Self Refresh
■ Wrap sequence: sequential/interleave
■ Burst Termination by Burst Stop command and Precharge command




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About STMicroelectronics


STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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