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SST36VF1602G-70-4C-EKE Datasheet (PDF) - Silicon Storage Technology, Inc

SST36VF1602G-70-4C-EKE Datasheet PDF - Silicon Storage Technology, Inc
Part # SST36VF1602G-70-4C-EKE
Download  SST36VF1602G-70-4C-EKE Download

File Size   935.12 Kbytes
Page   36 Pages
Manufacturer  SST [Silicon Storage Technology, Inc]
Direct Link  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc
Description 16 Mbit (x8/x16) Concurrent SuperFlash

SST36VF1602G-70-4C-EKE Datasheet (PDF)

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SST36VF1602G-70-4C-EKE Datasheet PDF - Silicon Storage Technology, Inc

Part # SST36VF1602G-70-4C-EKE
Download  SST36VF1602G-70-4C-EKE Click to download

File Size   935.12 Kbytes
Page   36 Pages
Manufacturer  SST [Silicon Storage Technology, Inc]
Direct Link  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc
Description 16 Mbit (x8/x16) Concurrent SuperFlash

SST36VF1602G-70-4C-EKE Datasheet (HTML) - Silicon Storage Technology, Inc

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SST36VF1602G-70-4C-EKE Product details

PRODUCT DESCRIPTION
The SST36VF1601G and SST36VF1602G are 1M x16 or 2M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST proprietary, high performance CMOS SuperFlash memory technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The devices write (Program or Erase) with a 2.7-3.6V power supply and conform to JEDEC standard pinouts for x8/x16 memories.
   
FEATURES:
• Organized as 1M x16 or 2M x8
• Dual Bank Architecture for Concurrent
    Read/Write Operation
    – 16 Mbit Bottom Sector Protection
    - SST36VF1601G: 4 Mbit + 12 Mbit
    – 16 Mbit Top Sector Protection
    - SST36VF1602G: 12 Mbit + 4 Mbit
• Single 2.7-3.6V for Read and Write Operations
• Superior Reliability
    – Endurance: 100,000 cycles (typical)
    – Greater than 100 years Data Retention
• Low Power Consumption:
    – Active Current: 6 mA typical
    – Standby Current: 4 µA typical
    – Auto Low Power Mode: 4 µA typical
• Hardware Sector Protection/WP# Input Pin
    – Protects the 4 outermost sectors (8 KWord)
        in the smaller bank by driving WP# low and
        unprotects by driving WP# high
• Hardware Reset Pin (RST#)
    – Resets the internal state machine to reading
        array data
• Byte# Pin
    – Selects 8-bit or 16-bit mode
• Sector-Erase Capability
    – Uniform 2 KWord sectors
• Chip-Erase Capability
• Block-Erase Capability
    – Uniform 32 KWord blocks
• Erase-Suspend / Erase-Resume Capabilities
• Security ID Feature
    – SST: 128 bits
    – User: 256 Byte
• Fast Read Access Time
    – 70 ns
• Latched Address and Data
• Fast Erase and Program (typical):
    – Sector-Erase Time: 18 ms
    – Block-Erase Time: 18 ms
    – Chip-Erase Time: 35 ms
    – Program Time: 7 µs
• Automatic Write Timing
    – Internal VPP Generation
• End-of-Write Detection
    – Toggle Bit
    – Data# Polling
    – Ready/Busy# pin
• CMOS I/O Compatibility
• Conforms to Common Flash Memory Interface (CFI)
• JEDEC Standards
    – Flash EEPROM Pinouts and command sets
• Packages Available
    – 48-ball TFBGA (6mm x 8mm)
    – 48-lead TSOP (12mm x 20mm)
    – 56-ball LFBGA (8mm x 10mm)
• All non-Pb (lead-free) devices are RoHS compliant
   



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About Silicon Storage Technology, Inc


Silicon Storage Technology, Inc. (SST) was an American technology company that specialized in the design and manufacture of non-volatile memory solutions, including flash memory and microcontrollers.
The company was founded in 1991 and had its headquarters in Sunnyvale, California.
SST was known for its innovative technology and high-quality products, and it had a strong reputation in the memory and storage industry.
In 2010, SST was acquired by Microchip Technology Inc., a leading provider of microcontroller and analog semiconductors.
Today, SST operates as a subsidiary of Microchip and continues to provide non-volatile memory solutions for a variety of applications.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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