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SST29VE010A-250-4C-WH Datasheet (PDF) - Silicon Storage Technology, Inc

SST29VE010A-250-4C-WH Datasheet PDF - Silicon Storage Technology, Inc
Part # SST29VE010A-250-4C-WH
Download  SST29VE010A-250-4C-WH Download

File Size   256.33 Kbytes
Page   26 Pages
Manufacturer  SST [Silicon Storage Technology, Inc]
Direct Link  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc
Description 1 Megabit (128K x 8) Page Mode EEPROM

SST29VE010A-250-4C-WH Datasheet (PDF)

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SST29VE010A-250-4C-WH Datasheet PDF - Silicon Storage Technology, Inc

Part # SST29VE010A-250-4C-WH
Download  SST29VE010A-250-4C-WH Click to download

File Size   256.33 Kbytes
Page   26 Pages
Manufacturer  SST [Silicon Storage Technology, Inc]
Direct Link  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc
Description 1 Megabit (128K x 8) Page Mode EEPROM

SST29VE010A-250-4C-WH Datasheet (HTML) - Silicon Storage Technology, Inc

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SST29VE010A-250-4C-WH Product details

PRODUCT DESCRIPTION
The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29EE010A/29LE010A/29VE010A write with a single power supply. Internal Erase/Program is transparent to the user. The SST29EE010A/29LE010A/29VE010A conform to JEDEC standard pinouts for bytewide memories.

FEATURES:
• Single Voltage Read and Write Operations
    – 5.0V-only for the SST29EE010A
    – 3.0-3.6V for the SST29LE010A
    – 2.7-3.6V for the SST29VE010A
• Superior Reliability
    – Endurance: 100,000 Cycles (typical)
    – Greater than 100 years Data Retention
• Low Power Consumption
    – Active Current: 20 mA (typical) for 5V and 10 mA (typical) for 3.0/2.7V
    – Standby Current: 10 µA (typical)
• Fast Page Write Operation
    – 128 Bytes per Page, 1024 Pages
    – Page Write Cycle: 5 ms (typical)
    – Complete Memory Rewrite: 5 sec (typical)
    – Effective Byte Write Cycle Time: 39 µs (typical)
• Fast Read Access Time
    – 5.0V-only operation: 90 and 120 ns
    – 3.0-3.6V operation: 150 and 200 ns
    – 2.7-3.6V operation: 200 and 250 ns
• Latched Address and Data
• Automatic Write Timing
    – Internal VPP Generation
• End of Write Detection
    – Toggle Bit
    – Data# Polling
• Hardware and Software Data Protection
• TTL I/O Compatibility
• JEDEC Standard
    – Flash EEPROM Pinouts and command sets
• Packages Available
    – 32 Pin PDIP
    – 32-Pin PLCC
    – 32-Pin TSOP (8mm x 20mm & 8mm x 14mm)



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About Silicon Storage Technology, Inc


Silicon Storage Technology, Inc. (SST) was an American technology company that specialized in the design and manufacture of non-volatile memory solutions, including flash memory and microcontrollers.
The company was founded in 1991 and had its headquarters in Sunnyvale, California.
SST was known for its innovative technology and high-quality products, and it had a strong reputation in the memory and storage industry.
In 2010, SST was acquired by Microchip Technology Inc., a leading provider of microcontroller and analog semiconductors.
Today, SST operates as a subsidiary of Microchip and continues to provide non-volatile memory solutions for a variety of applications.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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