TSSS2600 Datasheet(PDF) - Vishay Siliconix

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TSSS2600 Datasheet (PDF) - Vishay Siliconix

TSSS2600 Datasheet PDF - Vishay Siliconix


Part #	TSSS2600

Download	TSSS2600 Download

File Size	98.62 Kbytes

Page	5 Pages

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

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Description

GaAs IR Emitting Diode in Side View Miniature Package

TSSS2600 Datasheet (PDF)

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TSSS2600 Datasheet PDF - Vishay Siliconix


Part #	TSSS2600

Download	TSSS2600 Click to download

File Size	98.62 Kbytes

Page	5 Pages

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

Description	GaAs IR Emitting Diode in Side View Miniature Package

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TSSS2600 Product details

DESCRIPTION
TSSS2600 is an infrared, 950 nm emitting diode in GaAs technology, molded in a miniature, clear plastic package with side view lens.

FEATURES
• Package type: leaded
• Package form: side view
• Dimensions (L x W x H in mm): 3.6 x 2.2 x 5
• Peak wavelength: λp = 950 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 25°, horizontal
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Package matched with detector TEST2600
• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC

APPLICATIONS
• Infrared source in miniature light barriers or reflective sensor systems with short transmission distances and low forward voltage requirements. Matching with silicon PIN photodiodes or phototransistors (e.g. TEST2600)

Similar Part No. - TSSS2600

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	TSSS2600	104Kb / 5P	Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs Rev. 1.6, 05-Sep-08
	TSSS2600	108Kb / 5P	Infrared Emitting Diode, 950 nm, GaAs Rev. 1.7, 24-Aug-11
	TSSS2600	107Kb / 5P	Infrared Emitting Diode, 950 nm, GaAs 01-Jan-2022
	TSSS2600	106Kb / 5P	Infrared Emitting Diode, 950 nm, GaAs 01-Jan-2023
	TSSS2600	104Kb / 5P	Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs Rev. 1.6, 05-Sep-08

Similar Description - TSSS2600

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	CQX48	74Kb / 5P	GaAs Infrared Emitting Diode in Side View Package Rev. 5, 16-Nov-99
	TSKS5400	91Kb / 5P	GaAs Infrared Emitting Diode in Side View Package Rev. A7, 15-Dez-99
	TSKS5400S	107Kb / 6P	GaAs Infrared Emitting Diode in Side View Package Rev. 1, 30-Apr-02
TEMIC Semiconductors	TSKS5412X01	104Kb / 7P	GaAs Infrared Emitting Diode in Side View Package
Vishay Siliconix	TSSF4500	50Kb / 3P	High Speed Infrared Emitting Diode in Side View Package Rev. 3, 20-May-99
Unity Opto Technology	MIE-134G2	39Kb / 2P	GaAs/GaAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE
Vishay Siliconix	TSAL4400	81Kb / 5P	GaAs/GaAlAs IR Emitting Diode in 짰3 mm (T.1) Package Rev. 3, 20-May-99
	CQY36N	120Kb / 6P	GaAs Infrared Emitting Diode in Miniature (T-3/4) Package Rev. 1.4, 08-Mar-05
	CQY37N	76Kb / 5P	GaAs Infrared Emitting Diode in Miniature (T-3/4)Package Rev. 2, 20-May-99
	CQY37N	106Kb / 6P	GaAs Infrared Emitting Diode in Miniature (T-4/3) Package Rev. 1.5, 30-Mar-06

About Vishay Siliconix

Vishay Siliconix is a subsidiary of Vishay Intertechnology, a global manufacturer of passive electronic components.
Vishay Siliconix specializes in the design, manufacturing, and marketing of power MOSFETs, IGBTs, and other power semiconductors.
The company was founded in 1962 and is headquartered in Santa Clara, California.
Vishay Siliconix provides power solutions for a variety of applications, including renewable energy systems, industrial equipment, computing and telecommunications, and automotive electronics.
The company's products are designed for high efficiency, low power consumption, and high reliability, and are manufactured in state-of-the-art facilities using advanced fabrication processes.
With a focus on innovation and customer satisfaction, Vishay Siliconix is committed to providing its customers with the best power management solutions to meet their needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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