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SST31LF041-70-4C-WH Datasheet (PDF) - Silicon Storage Technology, Inc

SST31LF041-70-4C-WH Datasheet PDF - Silicon Storage Technology, Inc
Part # SST31LF041-70-4C-WH
Download  SST31LF041-70-4C-WH Download

File Size   310.88 Kbytes
Page   26 Pages
Manufacturer  SST [Silicon Storage Technology, Inc]
Direct Link  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc
Description 4 Mbit Flash 1 Mbit or 256 Kbit SRAM ComboMemory

SST31LF041-70-4C-WH Datasheet (PDF)

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SST31LF041-70-4C-WH Datasheet PDF - Silicon Storage Technology, Inc

Part # SST31LF041-70-4C-WH
Download  SST31LF041-70-4C-WH Click to download

File Size   310.88 Kbytes
Page   26 Pages
Manufacturer  SST [Silicon Storage Technology, Inc]
Direct Link  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc
Description 4 Mbit Flash 1 Mbit or 256 Kbit SRAM ComboMemory

SST31LF041-70-4C-WH Datasheet (HTML) - Silicon Storage Technology, Inc

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SST31LF041-70-4C-WH Product details

PRODUCT DESCRIPTION
The SST31LF041/041A/043/043A devices are a 512K x8 CMOS flash memory bank combined with a 128K x8 or 32K x8 CMOS SRAM memory bank manufactured with SST’s proprietary, high performance SuperFlash technology. The SST31LF041/041A/043/043A devices write (SRAM or flash) with a 3.0-3.6V power supply. The monolithic SST31LF041/041A/043/043A devices conform to Software Data Protect (SDP) commands for x8 EEPROMs.

FEATURES:
• Monolithic Flash + SRAM ComboMemory
    – SST31LF041/041A: 512K x8 Flash + 128K x8 SRAM
    – SST31LF043/043A: 512K x8 Flash + 32K x8 SRAM
• Single 3.0-3.6V Read and Write Operations
• Concurrent Operation
    – Read from or write to SRAM while Erase/Program Flash
• Superior Reliability
    – Endurance: 100,000 Cycles (typical)
    – Greater than 100 years Data Retention
• Low Power Consumption:
    – Active Current: 10 mA (typical) for Flash and 20 mA (typical) for SRAM Read
    – Standby Current: 10 µA (typical)
• Flash Sector-Erase Capability
    – Uniform 4 KByte sectors
• Latched Address and Data for Flash
• Fast Read Access Times:
    – SST31LF041/043 Flash: 70 ns SRAM: 70 ns
    – SST31LF041A/043A Flash: 300 ns SRAM: 300 ns
• Flash Fast Erase and Byte-Program:
    – Sector-Erase Time: 18 ms (typical)
    – Bank-Erase Time: 70 ms (typical)
    – Byte-Program Time: 14 µs (typical)
    – Bank Rewrite Time: 8 seconds (typical)
• Flash Automatic Erase and Program Timing
    – Internal VPP Generation
• Flash End-of-Write Detection
    – Toggle Bit
    – Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard Command Set
• Packages Available
    – 32-lead TSOP (8 x 14 mm) SST31LF041A/043A
    – 40-lead TSOP (10 x 14 mm) SST31LF041/043



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About Silicon Storage Technology, Inc


Silicon Storage Technology, Inc. (SST) was an American technology company that specialized in the design and manufacture of non-volatile memory solutions, including flash memory and microcontrollers.
The company was founded in 1991 and had its headquarters in Sunnyvale, California.
SST was known for its innovative technology and high-quality products, and it had a strong reputation in the memory and storage industry.
In 2010, SST was acquired by Microchip Technology Inc., a leading provider of microcontroller and analog semiconductors.
Today, SST operates as a subsidiary of Microchip and continues to provide non-volatile memory solutions for a variety of applications.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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