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SST34HF1601-70-4C-L1P Datasheet (PDF) - Silicon Storage Technology, Inc

SST34HF1601-70-4C-L1P Datasheet PDF - Silicon Storage Technology, Inc
Part # SST34HF1601-70-4C-L1P
Download  SST34HF1601-70-4C-L1P Download

File Size   472.8 Kbytes
Page   30 Pages
Manufacturer  SST [Silicon Storage Technology, Inc]
Direct Link  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc
Description 16 Mbit Concurrent SuperFlash 8 Mbit SRAM ComboMemory

SST34HF1601-70-4C-L1P Datasheet (PDF)

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SST34HF1601-70-4C-L1P Datasheet PDF - Silicon Storage Technology, Inc

Part # SST34HF1601-70-4C-L1P
Download  SST34HF1601-70-4C-L1P Click to download

File Size   472.8 Kbytes
Page   30 Pages
Manufacturer  SST [Silicon Storage Technology, Inc]
Direct Link  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc
Description 16 Mbit Concurrent SuperFlash 8 Mbit SRAM ComboMemory

SST34HF1601-70-4C-L1P Datasheet (HTML) - Silicon Storage Technology, Inc

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SST34HF1601-70-4C-L1P Product details

PRODUCT DESCRIPTION
The SST34HF1681 ComboMemory devices integrate a 1M x16 CMOS flash memory bank with a 512K x16 CMOS SRAM memory bank in a Multi-Chip Package (MCP). These devices are fabricated using SST’s proprietary, highperformance CMOS SuperFlash technology incorporating the split-gate cell design and thick oxide tunneling injector to attain better reliability and manufacturability compared with alternate approaches. The SST34HF1681 devices are ideal for applications such as cellular phones, GPSs, PDAs and other portable electronic devices in a low power and small form factor system.

FEATURES:
• Flash Organization: 1M x16
• Dual-Bank Architecture for Concurrent Read/Write Operation
    – 16 Mbit: 12 Mbit + 4 Mbit
• SRAM Organization:
    – 8 Mbit: 512K x16
• Single 2.7-3.3V Read and Write Operations
• Superior Reliability
    – Endurance: 100,000 Cycles (typical)
    – Greater than 100 years Data Retention
• Low Power Consumption:
    – Active Current: 25 mA (typical)
    – Standby Current: 20 µA (typical)
• Hardware Sector Protection (WP#)
– Protects 4 outer most sectors (4 KWord) in the larger bank by holding WP# low and unprotects by holding WP# high
• Hardware Reset Pin (RST#)
    – Resets the internal state machine to reading data array
• Sector-Erase Capability
    – Uniform 1 KWord sectors
• Block-Erase Capability
    – Uniform 32 KWord blocks
• Read Access Time
    – Flash: 70 and 90 ns
    – SRAM: 70 and 90 ns
• Latched Address and Data
• Fast Erase and Word-Program:
    – Sector-Erase Time: 18 ms (typical)
    – Block-Erase Time: 18 ms (typical)
    – Chip-Erase Time: 70 ms (typical)
    – Word-Program Time: 14 µs (typical)
    – Chip Rewrite Time: 8 seconds (typical)
• Automatic Write Timing
    – Internal VPP Generation
• End-of-Write Detection
    – Toggle Bit
    – Data# Polling
    – Ready/Busy# pin
• CMOS I/O Compatibility
• JEDEC Standard Command Set
• Conforms to Common Flash Memory Interface (CFI)
• Packages Available
    – 56-ball LFBGA (8mm x 10mm)



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About Silicon Storage Technology, Inc


Silicon Storage Technology, Inc. (SST) was an American technology company that specialized in the design and manufacture of non-volatile memory solutions, including flash memory and microcontrollers.
The company was founded in 1991 and had its headquarters in Sunnyvale, California.
SST was known for its innovative technology and high-quality products, and it had a strong reputation in the memory and storage industry.
In 2010, SST was acquired by Microchip Technology Inc., a leading provider of microcontroller and analog semiconductors.
Today, SST operates as a subsidiary of Microchip and continues to provide non-volatile memory solutions for a variety of applications.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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