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SST32HF401-90-4C-L3K Datasheet (PDF) - Silicon Storage Technology, Inc

SST32HF401-90-4C-L3K Datasheet PDF - Silicon Storage Technology, Inc
Part # SST32HF401-90-4C-L3K
Download  SST32HF401-90-4C-L3K Download

File Size   325.95 Kbytes
Page   26 Pages
Manufacturer  SST [Silicon Storage Technology, Inc]
Direct Link  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc
Description Multi-Purpose Flash (MPF) SRAM ComboMemory

SST32HF401-90-4C-L3K Datasheet (PDF)

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SST32HF401-90-4C-L3K Datasheet PDF - Silicon Storage Technology, Inc

Part # SST32HF401-90-4C-L3K
Download  SST32HF401-90-4C-L3K Click to download

File Size   325.95 Kbytes
Page   26 Pages
Manufacturer  SST [Silicon Storage Technology, Inc]
Direct Link  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc
Description Multi-Purpose Flash (MPF) SRAM ComboMemory

SST32HF401-90-4C-L3K Datasheet (HTML) - Silicon Storage Technology, Inc

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SST32HF401-90-4C-L3K Product details

PRODUCT DESCRIPTION
The SST32HF20x/40x ComboMemory devices integrate a 128K x16 or 256K x16 CMOS flash memory bank with a 64K x16 or 128K x16 CMOS SRAM memory bank in a Multi-Chip Package (MCP), manufactured with SST’s proprietary, high performance SuperFlash technology.

FEATURES:
• MPF + SRAM ComboMemory
    – SST32HF201: 128K x16 Flash + 64K x16 SRAM
    – SST32HF202: 128K x16 Flash + 128K x16 SRAM
    – SST32HF401: 256K x16 Flash + 64K x16 SRAM
    – SST32HF402: 256K x16 Flash + 128K x16 SRAM
• Single 2.7-3.3V Read and Write Operations
• Concurrent Operation
    – Read from or write to SRAM while Erase/Program Flash
• Superior Reliability
    – Endurance: 100,000 Cycles (typical)
    – Greater than 100 years Data Retention
• Low Power Consumption:
    – Active Current: 15 mA (typical) for Flash or SRAM Read
    – Standby Current: 20 µA (typical)
• Flexible Erase Capability
    – Uniform 2 KWord sectors
    – Uniform 32 KWord size blocks
• Fast Read Access Times:
    – Flash: 70 and 90 ns
    – SRAM: 70 and 90 ns
• Latched Address and Data for Flash
• Flash Fast Erase and Word-Program:
    – Sector-Erase Time: 18 ms (typical)
    – Block-Erase Time: 18 ms (typical)
    – Chip-Erase Time: 70 ms (typical)
    – Word-Program Time: 14 µs (typical)
    – Chip Rewrite Time:
        SST32HF201/202: 2 seconds (typical)
        SST32HF401/402: 4 seconds (typical)
• Flash Automatic Erase and Program Timing
    – Internal VPP Generation
• Flash End-of-Write Detection
    – Toggle Bit
    – Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard Command Set
• Conforms to Flash pinout
• Package Available
    – 48-ball LFBGA (6mm x 8mm)



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About Silicon Storage Technology, Inc


Silicon Storage Technology, Inc. (SST) was an American technology company that specialized in the design and manufacture of non-volatile memory solutions, including flash memory and microcontrollers.
The company was founded in 1991 and had its headquarters in Sunnyvale, California.
SST was known for its innovative technology and high-quality products, and it had a strong reputation in the memory and storage industry.
In 2010, SST was acquired by Microchip Technology Inc., a leading provider of microcontroller and analog semiconductors.
Today, SST operates as a subsidiary of Microchip and continues to provide non-volatile memory solutions for a variety of applications.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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