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SST39SF512-70-4I-NH Datasheet (PDF) - Silicon Storage Technology, Inc

SST39SF512-70-4I-NH Datasheet PDF - Silicon Storage Technology, Inc
Part # SST39SF512-70-4I-NH
Download  SST39SF512-70-4I-NH Download

File Size   269.2 Kbytes
Page   22 Pages
Manufacturer  SST [Silicon Storage Technology, Inc]
Direct Link  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc
Description 512 Kbit / 1 Mbit (x8) Multi-Purpose Flash

SST39SF512-70-4I-NH Datasheet (PDF)

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SST39SF512-70-4I-NH Datasheet PDF - Silicon Storage Technology, Inc

Part # SST39SF512-70-4I-NH
Download  SST39SF512-70-4I-NH Click to download

File Size   269.2 Kbytes
Page   22 Pages
Manufacturer  SST [Silicon Storage Technology, Inc]
Direct Link  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc
Description 512 Kbit / 1 Mbit (x8) Multi-Purpose Flash

SST39SF512-70-4I-NH Datasheet (HTML) - Silicon Storage Technology, Inc

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SST39SF512-70-4I-NH Product details

PRODUCT DESCRIPTION

The SST39SF512/010 are CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF512/010 devices write (Program or Erase) with a 5.0V-only power supply. The SST39SF512/010 device conforms to JEDEC standard pinouts for x8 memories.

Featuring high performance Byte-Program, the SST39SF512/010 devices provide a maximum Byte-Program time of 30 µsec. These devices use Toggle Bit or Data# Polling to indicate the completion of Program operation. To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed endurance of 10,000 cycles. Data retention is rated at greater than 100 years.



FEATURES:

• Organized as 64K x8 / 128K x8

• Single 5.0V Read and Write Operations

• Superior Reliability

   – Endurance: 100,000 Cycles (typical)

   – Greater than 100 years Data Retention

• Low Power Consumption:

   – Active Current: 20 mA (typical)

   – Standby Current: 10 µA (typical)

• Sector-Erase Capability

   – Uniform 4 KByte sectors

• Fast Read Access Time:

   – 70 ns

   – 90 ns

• Latched Address and Data

• Fast Erase and Byte-Program:

   – Sector-Erase Time: 7 ms (typical)

   – Chip-Erase Time: 15 ms (typical)

   – Byte-Program Time: 20 µs (typical)

   – Chip Rewrite Time:

      2 seconds (typical) for SST39SF512

      3 seconds (typical) for SST39SF010

• Automatic Write Timing

   – Internal VPP Generation

• End-of-Write Detection

   – Toggle Bit

   – Data# Polling

• TTL I/O Compatibility

• JEDEC Standard

   – Flash EEPROM Pinouts and command sets

• Packages Available

   – 32-pin PLCC

   – 32-pin TSOP (8mm x 14mm)

   – 32-pin PDIP



 




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About Silicon Storage Technology, Inc


Silicon Storage Technology, Inc. (SST) was an American technology company that specialized in the design and manufacture of non-volatile memory solutions, including flash memory and microcontrollers.
The company was founded in 1991 and had its headquarters in Sunnyvale, California.
SST was known for its innovative technology and high-quality products, and it had a strong reputation in the memory and storage industry.
In 2010, SST was acquired by Microchip Technology Inc., a leading provider of microcontroller and analog semiconductors.
Today, SST operates as a subsidiary of Microchip and continues to provide non-volatile memory solutions for a variety of applications.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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