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RD01MUS2B Datasheet (PDF) - Mitsubishi Electric Semiconductor
RD01MUS2B Datasheet PDF - Mitsubishi Electric Semiconductor
Part # RD01MUS2B
Download  RD01MUS2B Download

File Size   2698.21 Kbytes
Page   15 Pages
Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor
Description RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W

RD01MUS2B Datasheet (PDF)

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RD01MUS2B Datasheet PDF - Mitsubishi Electric Semiconductor

Part # RD01MUS2B
Download  RD01MUS2B Click to download

File Size   2698.21 Kbytes
Page   15 Pages
Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor
Description RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W

RD01MUS2B Datasheet (HTML) - Mitsubishi Electric Semiconductor

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RD01MUS2B Product details

DESCRIPTION
RD01MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
This device has an internal monolithic zener diode from gate to source for ESD protection.

FEATURES
• High power gain and High Efficiency.
   Pout 1.6W Typ, Gp 15dBTyp, 70%Typ @Vdd=7.2V,f=527MHz
• Integrated gate protection diode

APPLICATION
   For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.




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