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SGS6N60UFD Datasheet (PDF) - Fairchild Semiconductor

SGS6N60UFD Datasheet PDF - Fairchild Semiconductor
Part # SGS6N60UFD
Download  SGS6N60UFD Download

File Size   590.55 Kbytes
Page   8 Pages
Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor
Description Ultra-Fast IGBT

SGS6N60UFD Datasheet (PDF)

Go To PDF Page Download Datasheet
SGS6N60UFD Datasheet PDF - Fairchild Semiconductor

Part # SGS6N60UFD
Download  SGS6N60UFD Click to download

File Size   590.55 Kbytes
Page   8 Pages
Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor
Description Ultra-Fast IGBT

SGS6N60UFD Datasheet (HTML) - Fairchild Semiconductor

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SGS6N60UFD Product details

General Description
Fairchilds UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature..

Features
• High speed switching
• Low saturation voltage : VCE(sat) = 2.1 V @ IC = 3A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 35ns (typ.)

Application
    AC & DC Motor controls, general purpose inverters, robotics, servo controls




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About Fairchild Semiconductor


Fairchild Semiconductor was a pioneering semiconductor company that was founded in the late 1950s.
The company was known for its innovation in the development of the first commercial transistor and for its contributions to the advancement of the integrated circuit technology.
Fairchild became a leading supplier of power semiconductors, analog and mixed-signal integrated circuits, and other semiconductor products.
The company was acquired by ON Semiconductor in 2016 and its products and technologies continue to be developed and sold under the ON Semiconductor brand.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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