General Description
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features
• 8 A, 60 V. RDS(on) = 0.020 Ω @ VGS = 10 V RDS(on) = 0.025 Ω @ VGS = 6 V.
• Low gate charge (30nC typical).
• Fast switching speed.
• High performance trench technology for extremely low RDS(ON).
• High power and current handling capability.

Applications
• DC/DC converter
• Load switch
• Motor drives