General Description
This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features
• -8.0 A, -20 V. RDS(on) = 0.024 Ω @ VGS = -4.5
                         RDS(on) = 0.032 Ω @ VGS = -2.5 V.
• Low gate charge (23nC typical).
• Fast switching speed.
• High performance trench technology for extremely low RDS(ON).
• High power and current handling capability.

Applications
• DC/DC converter
• Load switch
• Battery Protection