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FRE9260R Datasheet (PDF) - Intersil Corporation

FRE9260R Datasheet PDF - Intersil Corporation
Part # FRE9260R
Download  FRE9260R Download

File Size   47.85 Kbytes
Page   6 Pages
Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation
Description 19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs

FRE9260R Datasheet (PDF)

Go To PDF Page Download Datasheet
FRE9260R Datasheet PDF - Intersil Corporation

Part # FRE9260R
Download  FRE9260R Click to download

File Size   47.85 Kbytes
Page   6 Pages
Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation
Description 19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs

FRE9260R Datasheet (HTML) - Intersil Corporation

FRE9260R Datasheet HTML 1Page - Intersil Corporation FRE9260R Datasheet HTML 2Page - Intersil Corporation FRE9260R Datasheet HTML 3Page - Intersil Corporation FRE9260R Datasheet HTML 4Page - Intersil Corporation FRE9260R Datasheet HTML 5Page - Intersil Corporation FRE9260R Datasheet HTML 6Page - Intersil Corporation

FRE9260R Product details

Description
The Intersil Corporation Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100KRAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.

Features
• 19A, -200V, RDS(on) = 0.210Ω
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma
    - Meets Pre-Rad Specifications to 100KRAD(SI)
    - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
    - Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot
    - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
    - Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 18.0nA Per-RAD(Si)/sec Typically
• Neutron
    - Pre-RAD Specifications for 1E13 Neutrons/cm2
    - Usable to 1E14 Neutrons/cm2




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About Intersil Corporation


Intersil Corporation was an American semiconductor company that specialized in the design and manufacture of high-performance analog and mixed-signal integrated circuits.
The company was founded in 1967 and was known for its expertise in power management, data conversion, and radio frequency (RF) technologies.
Intersil's products were used in a wide range of applications such as consumer electronics, industrial, telecommunications, and aerospace and defense.
In 2016, Intersil was acquired by Renesas Electronics Corporation, a Japanese semiconductor company.
The Intersil brand and technology continue to be developed and sold as part of Renesas' portfolio of products.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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