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FSPYC260R3 Datasheet (PDF) - Intersil Corporation

FSPYC260R3 Datasheet PDF - Intersil Corporation
Part # FSPYC260R3
Download  FSPYC260R3 Download

File Size   83.67 Kbytes
Page   8 Pages
Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation
Description Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

FSPYC260R3 Datasheet (PDF)

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FSPYC260R3 Datasheet PDF - Intersil Corporation

Part # FSPYC260R3
Download  FSPYC260R3 Click to download

File Size   83.67 Kbytes
Page   8 Pages
Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation
Description Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

FSPYC260R3 Datasheet (HTML) - Intersil Corporation

FSPYC260R3 Datasheet HTML 1Page - Intersil Corporation FSPYC260R3 Datasheet HTML 2Page - Intersil Corporation FSPYC260R3 Datasheet HTML 3Page - Intersil Corporation FSPYC260R3 Datasheet HTML 4Page - Intersil Corporation FSPYC260R3 Datasheet HTML 5Page - Intersil Corporation FSPYC260R3 Datasheet HTML 6Page - Intersil Corporation FSPYC260R3 Datasheet HTML 7Page - Intersil Corporation FSPYC260R3 Datasheet HTML 8Page - Intersil Corporation

FSPYC260R3 Product details

Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star*Power FETs combine this electrical capability with total dose radiation hardness up to 300K RADS while maintaining the guaranteed performance for SEE (Single Event Effects) which the Intersil FS families have always featured.

Features
• 58A, 200V, rDS(ON) = 0.031Ω
• UIS Rated
• Total Dose
    - Meets Pre-RAD Specifications to 100K RAD (Si)
    - Rated to 300K RAD (Si)
• Single Event
    - Safe Operating Area Curve for Single Event Effects
    - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 100% of Rated Breakdown and VGS of 10V Off-Bias
• Dose Rate
    - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
    - Typically Survives 2E12 if Current Limited to IAS
• Photo Current
    - 17nA Per-RAD (Si)/s Typically
• Neutron
    - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2
    - Usable to 1E14 Neutrons/cm2




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About Intersil Corporation


Intersil Corporation was an American semiconductor company that specialized in the design and manufacture of high-performance analog and mixed-signal integrated circuits.
The company was founded in 1967 and was known for its expertise in power management, data conversion, and radio frequency (RF) technologies.
Intersil's products were used in a wide range of applications such as consumer electronics, industrial, telecommunications, and aerospace and defense.
In 2016, Intersil was acquired by Renesas Electronics Corporation, a Japanese semiconductor company.
The Intersil brand and technology continue to be developed and sold as part of Renesas' portfolio of products.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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