PXAC192908FVV1R250XTMA1 Datasheet(PDF) - Infineon Technologies AG

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PXAC192908FVV1R250XTMA1 Datasheet (PDF) - Infineon Technologies AG

PXAC192908FVV1R250XTMA1 Datasheet PDF - Infineon Technologies AG


Part #	PXAC192908FVV1R250XTMA1

Download	PXAC192908FVV1R250XTMA1 Download

File Size	1060.8 Kbytes

Page	9 Pages

Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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Description

Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1930 ??1995 MHz

PXAC192908FVV1R250XTMA1 Datasheet (PDF)

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PXAC192908FVV1R250XTMA1 Datasheet PDF - Infineon Technologies AG


Part #	PXAC192908FVV1R250XTMA1

Download	PXAC192908FVV1R250XTMA1 Click to download

File Size	1060.8 Kbytes

Page	9 Pages

Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

Logo

Description	Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1930 ??1995 MHz

PXAC192908FVV1R250XTMA1 Datasheet (HTML) - Infineon Technologies AG

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Similar Part No. - PXAC192908FVV1R250XTMA1

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	PXAC192908FV	1Mb / 9P	Thermally-Enhanced High Power RF LDMOS FET Rev. 02.2, 2015-07-14
Cree, Inc	PXAC192908FV	525Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1930 ??1995 MHz
Infineon Technologies A...	PXAC192908FV	1Mb / 9P	Thermally-Enhanced High Power RF LDMOS FET Rev. 02.2, 2015-07-14

Similar Description - PXAC192908FVV1R250XTMA1

Manufacturer	Part #	Datasheet	Description
Cree, Inc	PXAC192908FV	525Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1930 ??1995 MHz
Cree, Inc	PTFB192503FL	531Kb / 14P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 1930 ??1990 MHz
Infineon Technologies A...	PTFA192401E	431Kb / 11P	Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 ??1990 MHz Rev. 02, 2009-04-01
WOLFSPEED, INC.	PXAE261908NF	568Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 2515 – 2675 MHz Rev. 04. 2023-7-24
Infineon Technologies A...	PTFB192503EL	673Kb / 15P	Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930-1990 MHz Rev. 09, 2010-11-09
Cree, Inc	PXAC182908FV	515Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1805 ??1880 MHz
Cree, Inc	PTFB193404F	610Kb / 14P	Thermally-Enhanced High Power RF LDMOS FET 340 W, 30 V, 1930 ??1990 MHz
Infineon Technologies A...	PTFC210202FC	655Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz Rev. 03.4, 2016-06-22
Cree, Inc	PTFC210202FC	700Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 - 2200 MHz
WOLFSPEED, INC.	PTFC210202FC-V1	828Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Rev. 06, 2023-06-28

About Infineon Technologies AG

Infineon Technologies is a leading global semiconductor manufacturer that specializes in providing power management, security, and control solutions for a variety of industries such as automotive, industrial, and communication systems.
The company was founded in 1999 and is headquartered in Neubiberg, Germany.
Infineon offers a wide range of products including microcontrollers, power semiconductors, sensors, and other integrated circuits.
The company has a strong presence in the global market, with operations and facilities in various countries across the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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