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3SK239A Datasheet (PDF) - Hitachi Semiconductor

3SK239A Datasheet PDF - Hitachi Semiconductor
Part # 3SK239A
Download  3SK239A Download

File Size   41.65 Kbytes
Page   6 Pages
Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor
Description GaAs Dual Gate MES FET

3SK239A Datasheet (PDF)

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3SK239A Datasheet PDF - Hitachi Semiconductor

Part # 3SK239A
Download  3SK239A Click to download

File Size   41.65 Kbytes
Page   6 Pages
Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor
Description GaAs Dual Gate MES FET

3SK239A Datasheet (HTML) - Hitachi Semiconductor

3SK239A Datasheet HTML 1Page - Hitachi Semiconductor 3SK239A Datasheet HTML 2Page - Hitachi Semiconductor 3SK239A Datasheet HTML 3Page - Hitachi Semiconductor 3SK239A Datasheet HTML 4Page - Hitachi Semiconductor 3SK239A Datasheet HTML 5Page - Hitachi Semiconductor 3SK239A Datasheet HTML 6Page - Hitachi Semiconductor



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About Hitachi Semiconductor


Hitachi Semiconductor is a subsidiary of Hitachi, Ltd., a Japanese company that specializes in the design and manufacture of semiconductors.
The company was established in 1970 and is headquartered in Tokyo, Japan.
Hitachi Semiconductor offers a wide range of products including memory products, microcontrollers, power management ICs, and other analog and digital semiconductors.
The company's products are used in various applications such as consumer electronics, automotive systems, and industrial equipment.
Hitachi Semiconductor is known for its expertise in semiconductor technology and its ability to deliver high-quality and reliable products to its customers.
The company has operations and facilities in various countries across the world and works closely with its customers to provide customized semiconductor solutions that meet their specific requirements and needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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