Manufacturer | Part # | Datasheet | Description |
Infineon Technologies A... |
BSZ025N04LS
|
1Mb/12P
|
Optimized for synchronous rectification
Rev.2.1,2014-06-27
|
Search Partnumber :
Start with "BSZ025N04LS" -
Total : 89 ( 1/5 Page) |
Infineon Technologies A... |
BSZ021N04LS6
|
1Mb/11P |
OptiMOSTM6 Power-Transistor, 40 V
Rev.2.3,2021-02-23 |
BSZ023N04LS
|
1,021Kb/2P |
New OptiMOS??40V and 60V
07 / 2012 |
BSZ024N04LS6
|
1Mb/11P |
OptiMOSTM 6 Power-Transistor, 40 V
Rev.2.2,2021-02-22 |
BSZ028N04LS
|
1Mb/11P |
OptiMOSTM Power-MOSFET, 40 V
Rev.2.1,2016-06-09 |
BSZ009NE2LS5
|
1Mb/11P |
OptiMOSTM 5 Power-Transistor, 25 V
Rev.2.1,2020-05-12 |
BSZ010NE2LS5
|
1Mb/11P |
OptiMOSTM 5 Power-Transistor, 25 V
Rev.2.2,2020-05-12 |
BSZ011NE2LS5I
|
1Mb/11P |
OptiMOSTM5 Power-Transistor, 25 V
Rev.2.1,2020-10-23 |
BSZ013NE2LS5I
|
1Mb/12P |
Metal Oxide Semiconductor Field Effect Transistor
Rev.2.0 |
BSZ013NE2LS5I
|
1Mb/12P |
Metal Oxide Semiconductor Field Effect Transistor
Rev.2.0 |
BSZ014NE2LS5IF
|
1Mb/12P |
Metal Oxide Semiconductor Field Effect Transistor
Rev.2.1,2015-04-27 |
BSZ014NE2LS5IF
|
1Mb/12P |
Metal Oxide Semiconductor Field Effect Transistor
Rev.2.1,2015-04-27 |
BSZ017NE2LS5I
|
1Mb/12P |
Metal Oxide Semiconductor Field Effect Transistor
Rev.2.0 |
BSZ017NE2LS5I
|
1Mb/12P |
Metal Oxide Semiconductor Field Effect Transistor
Rev.2.0 |
BSZ018N04LS6
|
1Mb/11P |
OptiMOSTM 6 Power-Transistor, 40 V
Rev.2.1,2020-03-31 |
BSZ018NE2LS
|
1Mb/11P |
n-Channel Power MOSFET
V2.0, 2011-03-29 |
BSZ018NE2LSI
|
631Kb/9P |
OptiMOSTM Power-MOSFET
Rev. 2.1 2013-04-25 |
BSZ019N03LS
|
33Kb/1P |
Material Content Data Sheet
14. August 2015 |
BSZ019N03LS
|
1Mb/11P |
n-Channel Power MOSFET
V2.0, 2011-03-29 |
BSZ019N03LS
|
33Kb/1P |
Material Content Data Sheet
14. August 2015 |