Manufacturer | Part # | Datasheet | Description |
Infineon Technologies A... |
IDW100E60
|
165Kb/6P
|
Fast Switching EmCon Diode
Rev. 1.1 Mar 06
|
IDW100E60
|
188Kb/7P
|
Fast Switching EmCon Diode
Rev. 2.1 Nov 09
|
IDW100E60
|
188Kb/7P
|
Fast Switching EmCon Diode
Rev. 2.1 Nov 09
|
IDW100E60
|
303Kb/7P
|
Fast Switching Emitter Controlled Diode
Rev. 2.3 20.09.2013
|
Search Partnumber :
Start with "IDW100E60" -
Total : 16 ( 1/1 Page) |
Infineon Technologies A... |
IDW100E60
|
188Kb/7P |
Fast Switching EmCon Diode
Rev. 2.1 Nov 09 |
IDW100E60
|
303Kb/7P |
Fast Switching Emitter Controlled Diode
Rev. 2.3 20.09.2013 |
IDW10G120C5B
|
815Kb/10P |
Revolutionary semiconductor material - Silicon Carbide
Rev. 2.0 2014-06-10 |
IDW10G65C5
|
417Kb/2P |
650V SiC thinQ!??Generation 5 diodes
09 / 2012 |
IDW10G65C5
|
1Mb/11P |
5t h Generation thinQ!TM 650V SiC Schottky Diode
Rev. 2.2, 2013-01-15 |
IDW10G65C5
|
1Mb/11P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
Rev. 2.2, 2013-01-15 |
IDW10G65C5
|
1Mb/11P |
5t h Generation thinQ!TM 650V SiC Schottky Diode
Rev. 2.2, 2013-01-15 |
IDW10S120
|
743Kb/10P |
Power Management & Mul t imarket
Rev. 2.0,<2012-03-23> |
IDW10S120FKSA1
|
743Kb/10P |
Power Management & Mul t imarket
Rev. 2.0,<2012-03-23> |
IDW12G65C5
|
417Kb/2P |
650V SiC thinQ!??Generation 5 diodes
09 / 2012 |
IDW12G65C5
|
1Mb/11P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
Rev. 2.2, 2013-01-15 |
IDW15E65D2
|
1Mb/10P |
Qualified according to JEDEC for target applications
Rev.2.2,2014-08-26 |
IDW15G120C5B
|
590Kb/10P |
Revolutionary semiconductor material - Silicon Carbide
Rev. 2.0 2014-06-10 |
IDW15S120
|
744Kb/10P |
thinQ!TM SiC Schot tky Diode
Rev. 2.0,2012-03-23 |
IDW16G65C5
|
417Kb/2P |
650V SiC thinQ!??Generation 5 diodes
09 / 2012 |
IDW16G65C5
|
1Mb/11P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
Rev. 2.2, 2013-01-15 |