Manufacturer | Part # | Datasheet | Description |
IP SEMICONDUCTOR CO., L... |
IPT2008-DEA
|
209Kb/4P
|
High current density due to double mesa technology
|
Search Partnumber :
Start with "IPT2008-DEA" -
Total : 11 ( 1/1 Page) |
IP SEMICONDUCTOR CO., L... |
IPT2008-DEB
|
209Kb/4P |
High current density due to double mesa technology
|
IPT2008-BEA
|
209Kb/4P |
High current density due to double mesa technology
|
IPT2008-BEB
|
209Kb/4P |
High current density due to double mesa technology
|
IPT2008-CEA
|
209Kb/4P |
High current density due to double mesa technology
|
IPT2008-CEB
|
209Kb/4P |
High current density due to double mesa technology
|
IPT2006-BEA
|
209Kb/4P |
High current density due to double mesa technology
|
IPT2006-BEB
|
209Kb/4P |
High current density due to double mesa technology
|
IPT2006-CEA
|
209Kb/4P |
High current density due to double mesa technology
|
IPT2006-CEB
|
209Kb/4P |
High current density due to double mesa technology
|
IPT2006-DEA
|
209Kb/4P |
High current density due to double mesa technology
|
IPT2006-DEB
|
209Kb/4P |
High current density due to double mesa technology
|