Manufacturer | Part # | Datasheet | Description |
NXP Semiconductors |
PDTD123E
|
68Kb/10P
|
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW
Rev. 01-8 April 2005
|
PDTD123E
|
131Kb/10P
|
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓
Rev. 02-16 November 2009
|
Nexperia B.V. All right... |
PDTD123E
|
245Kb/11P
|
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
Rev. 02 - 16 November 2009
|
NXP Semiconductors |
PDTD123EK
|
68Kb/10P
|
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW
Rev. 01-8 April 2005
|
PDTD123EK
|
948Kb/12P
|
Low VCEsat (BISS) transistors
May 2006
|
PDTD123EK
|
131Kb/10P
|
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓
Rev. 02-16 November 2009
|
Nexperia B.V. All right... |
PDTD123EK
|
245Kb/11P
|
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
Rev. 02 - 16 November 2009
|
PDTD123EQA
|
2Mb/24P
|
50 V, 500 mA NPN resistor-equipped transistors
|
PDTD123EQA
|
2Mb/24P
|
50 V, 500 mA NPN resistor-equipped transistors
Rev. 1 - 4 February 2016
|
PDTD123EQA
|
3Mb/23P
|
50 V, 500 mA PNP resistor-equipped transistors
Rev. 1 - 30 March 2016
|
NXP Semiconductors |
PDTD123ES
|
131Kb/10P
|
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓
Rev. 02-16 November 2009
|
Nexperia B.V. All right... |
PDTD123ES
|
245Kb/11P
|
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
Rev. 02 - 16 November 2009
|
NXP Semiconductors |
PDTD123ES
|
68Kb/10P
|
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW
Rev. 01-8 April 2005
|
PDTD123ET
|
68Kb/10P
|
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW
Rev. 01-8 April 2005
|
PDTD123ET
|
948Kb/12P
|
Low VCEsat (BISS) transistors
May 2006
|
PDTD123ET
|
131Kb/10P
|
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓
Rev. 02-16 November 2009
|
Nexperia B.V. All right... |
PDTD123ET
|
245Kb/11P
|
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
Rev. 02 - 16 November 2009
|
PDTD123EU
|
3Mb/27P
|
500 mA, 50 V NPN resistor-equipped transistors
|
PDTD123EU
|
3Mb/27P
|
500 mA, 50 V NPN resistor-equipped transistors
Rev. 1 - 13 May 2014
|
PDTD123EU
|
3Mb/27P
|
500 mA, 50 V PNP resistor-equipped transistors
Rev. 1 - 6 May 2014
|