Manufacturer | Part # | Datasheet | Description |
NXP Semiconductors |
PHB110NQ06LT
|
94Kb/13P
|
N-channel TrenchMOS logic level FET
Rev. 01-04 May 2004
|
PHB110NQ06LT
|
218Kb/13P
|
N-channel TrenchMOS logic level FET
Rev. 02-4 March 2010
|
Search Partnumber :
Start with "PHB110NQ06LT" -
Total : 12 ( 1/1 Page) |
NXP Semiconductors |
PHB110NQ08LT
|
91Kb/13P |
N-channel TrenchMOS logic level FET
Rev. 01-29 March 2004 |
PHB110NQ08T
|
89Kb/13P |
N-channel TrenchMOS standard level FET
Rev. 01-29 March 2004 |
PHB110NQ08T
|
181Kb/12P |
N-channel TrenchMOS standard level FET
Rev. 02-12 October 2009 |
Nexperia B.V. All right... |
PHB110NQ08T
|
679Kb/12P |
N-channel TrenchMOS standard level FET
Rev. 02 - 12 October 2009 |
NXP Semiconductors |
PHB112N06T
|
262Kb/14P |
N-channel enhancement mode field-effect transistor
Rev. 01-07 March 2001 |
PHB119NQ06T
|
191Kb/13P |
N-channel TrenchMOS standard level FET
Rev. 02-15 April 2010 |
PHB119NQ06T
|
94Kb/13P |
N-channel TrenchMOS standard level FET
Rev. 01-05 May 2004 |
PHB11N03LT
|
105Kb/11P |
N-channel TrenchMOS transistor Logic level FET
September 1999 Rev 1.000 |
PHB11N06LT
|
76Kb/9P |
TrenchMOS transistor Logic level FET
September 1998 Rev 1.000 |
PHB11N06LT
|
114Kb/12P |
N-channel TrenchMOS transistor Logic level FET
August 1999 Rev 1.000 |
PHB11N50E
|
102Kb/9P |
PowerMOS transistors Avalanche energy rated
December 1998 Rev 1.000 |
PHB11N50E
|
41Kb/7P |
PowerMOS transistors Avalanche energy rated
January 1998 Rev 1.000 |