| Manufacturer | Part # | Datasheet | Description |
Ruichips Semiconductor ... |
RU1H35K
|
294Kb/8P
|
N-Channel Advanced Power MOSFET
|
SHENZHEN DOINGTER SEMIC... |
RU1H35K
|
1Mb/4P
|
N-Channel MOSFET uses advanced trench technology
|
| Search Partnumber :
Start with "RU1H35K" -
Total : 14 ( 1/1 Page) |
Ruichips Semiconductor ... |
RU1H35L
|
276Kb/9P |
N-Channel Advanced Power MOSFET
|
VBsemi Electronics Co.,... |
RU1H35L
|
984Kb/8P |
N-Channel 100-V (D-S) MOSFET
|
SHENZHEN DOINGTER SEMIC... |
RU1H35L
|
1Mb/4P |
N-Channel MOSFET uses advanced SGT technology
|
Ruichips Semiconductor ... |
RU1H35Q
|
370Kb/9P |
N-Channel Advanced Power MOSFET
|
SHENZHEN DOINGTER SEMIC... |
RU1H35R
|
949Kb/3P |
N-Channel MOSFET uses advanced trench technology
|
Ruichips Semiconductor ... |
RU1H35R
|
374Kb/9P |
N-Channel Advanced Power MOSFET
|
|
RU1H35S
|
370Kb/9P |
N-Channel Advanced Power MOSFET
|
|
RU1H300Q
|
303Kb/8P |
N-Channel Advanced Power MOSFET
|
|
RU1H301Q
|
397Kb/8P |
N-Channel Advanced Power MOSFET
|
|
RU1H36L
|
286Kb/9P |
N-Channel Advanced Power MOSFET Super High Dense Cell Design
|
SHENZHEN DOINGTER SEMIC... |
RU1H36L
|
862Kb/4P |
N-Channel MOSFET uses advanced SGT technology
|
Ruichips Semiconductor ... |
RU1H36R
|
281Kb/9P |
N-Channel Advanced Power MOSFET
|
SHENZHEN DOINGTER SEMIC... |
RU1H36R
|
948Kb/3P |
N-Channel MOSFET uses advanced trench technology
|
Ruichips Semiconductor ... |
RU1H36S
|
289Kb/9P |
N-Channel Advanced Power MOSFET Super High Dense Cell Design
|
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