Manufacturer | Part # | Datasheet | Description |
Omron Electronics LLC |
VB2211
|
259Kb/9P
|
Multiple Limit Switch
|
Search Partnumber :
Start with "VB2211" -
Total : 113 ( 1/6 Page) |
VBsemi Electronics Co.,... |
VB2212N
|
707Kb/9P |
P-Channel 20 V (D-S) MOSFET
|
VB2201K
|
774Kb/6P |
P-Channel 200V (D-S) MOSFET
|
VB2240
|
659Kb/8P |
P-Channel 20-V (D-S) MOSFET
|
VB2290
|
673Kb/9P |
P-Channel 20-V (D-S) MOSFET
|
VB2290
|
750Kb/9P |
P-Channel 20 V (D-S) 175 째C MOSFET
|
VB2290
|
672Kb/9P |
P-Channel 20-V (D-S) MOSFET
|
VB2290A
|
733Kb/9P |
P-Channel 20-V (D-S) MOSFET
|
VB2290A
|
732Kb/9P |
P-Channel 20-V (D-S) MOSFET
|
VB2290A
|
732Kb/9P |
P-Channel 20-V (D-S) MOSFET
|
VB2290
|
750Kb/9P |
P-Channel 20 V (D-S) 175 째C MOSFET
|
VB2290
|
672Kb/9P |
P-Channel 20-V (D-S) MOSFET
|
Vishay Siliconix |
VB20100C
|
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
Revision: 31-Jul-08 |
VB20100C
|
161Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Revision: 24-Jun-09 |
VB20100C
|
164Kb/5P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
Revision: 16-Aug-13 |
VB20100C
|
151Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Revision: 14-Aug-13 |
VB20100C
|
104Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
01-Jan-2022 |
VB20100C-E3
|
167Kb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
Revision: 13-Dec-16 |
VB20100C-E3
|
214Kb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier
01-Jan-2022 |
VB20100C-E3-4W
|
161Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Revision: 24-Jun-09 |