| Manufacturer | Part # | Datasheet | Description |
International Rectifier |
2N7609U8
|
178Kb/9P |
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT
|
Central Semiconductor C... |
2N760A
|
33Kb/1P |
Small Signal Transistors
|
International Rectifier |
2N7610T2
|
634Kb/14P |
Radiation Hardened Logic Level Power MOSFET Thru-Hole TO-205AF 250V, 3.3A, N-channel, R7 Technology
2023-01-06 |
|
2N7614M1
|
207Kb/9P |
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE
|
|
2N7617UC
|
207Kb/9P |
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT
|
|
2N7632UC
|
304Kb/16P |
RADIATION HARDENED60V, Combination 1N-1P-CHANNELLOGIC LEVEL POWER MOSFET
|
GeneSiC Semiconductor, ... |
2N7635-GA
|
1Mb/10P |
Normally ??OFF Silicon Carbide Junction Transistor
|
|
2N7636-GA
|
1Mb/10P |
Normally ??OFF Silicon Carbide Junction Transistor
|
|
2N7637-GA
|
1Mb/9P |
Normally ??OFF Silicon Carbide Junction Transistor
|
|
2N7638-GA
|
1Mb/9P |
Normally ??OFF Silicon Carbide Junction Transistor
|
|
2N7639-GA
|
1Mb/10P |
Normally ??OFF Silicon Carbide Junction Transistor
|
|
2N7640-GA
|
1Mb/10P |
Normally ??OFF Silicon Carbide Junction Transistor
|
Unisonic Technologies |
2N70
|
258Kb/6P |
2 Amps, 700 Volts N-CHANNEL POWER MOSFET
|
|
2N70-M
|
193Kb/7P |
N-CHANNEL POWER MOSFET
|
Motorola, Inc |
2N7000
|
77Kb/4P |
CASE 29-04, STYLE 22 TO-92 (TO-226AA)
|
NXP Semiconductors |
2N7000
|
76Kb/12P |
N-channel enhancement mode vertical D-MOS transistor
April 1995 |
Supertex, Inc |
2N7000
|
30Kb/4P |
N-Channel Enhancement-Mode Vertical DMOS FET
|
Transys Electronics |
2N7000
|
288Kb/3P |
N-CHANNEL-ENHANCEMENT
|
Vishay Siliconix |
2N7000
|
51Kb/5P |
N-Channel 60-V (D-S) MOSFET
Rev. F, 16-Jul-01 |
Fairchild Semiconductor |
2N7000
|
538Kb/14P |
N-Channel Enhancement Mode Field Effect Transistor
|
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