Manufacturer | Part # | Datasheet | Description |
Sanken electric |
2SC5287
|
32Kb/1P |
Silicon NPN Triple Diffused Planar Transistor
|
Quanzhou Jinmei Electro... |
2SC5287_2015
|
187Kb/4P |
Silicon NPN Power Transistors
|
Toshiba Semiconductor |
2SC5280
|
235Kb/5P |
NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)
|
New Jersey Semi-Conduct... |
2SC5280
|
130Kb/2P |
Silicon NPN Power Transistor
|
Savantic, Inc. |
2SC5280
|
323Kb/4P |
Silicon NPN Power Transistors
|
Inchange Semiconductor ... |
2SC5280
|
207Kb/4P |
Silicon NPN Power Transistors
|
Quanzhou Jinmei Electro... |
2SC5280
|
82Kb/3P |
Silicon NPN Power Transistors
|
Savantic, Inc. |
2SC5280
|
321Kb/4P |
Silicon NPN Power Transistors
|
Quanzhou Jinmei Electro... |
2SC5280
|
235Kb/4P |
Silicon NPN Power Transistors
|
2SC5280_2015
|
235Kb/4P |
Silicon NPN Power Transistors
|
Renesas Technology Corp |
2SC5288
|
344Kb/14P |
NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER
October 2001 |
NEC |
2SC5288
|
117Kb/12P |
NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER
|
2SC5288-T1
|
117Kb/12P |
NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER
|
Renesas Technology Corp |
2SC5288-T1
|
344Kb/14P |
NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER
October 2001 |
NEC |
2SC5289
|
114Kb/12P |
NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER
|
Renesas Technology Corp |
2SC5289
|
342Kb/14P |
NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER
October 2001 |
2SC5289-T1
|
342Kb/14P |
NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER
October 2001 |