Manufacturer | Part # | Datasheet | Description |
Renesas Technology Corp |
2SC5509-T2
|
231Kb/10P |
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE
|
NEC |
2SC5509-T2
|
82Kb/15P |
NPN SILICON RF TRANSISTOR
|
Renesas Technology Corp |
2SC5509-A
|
231Kb/10P |
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE
|
Sanyo Semicon Device |
2SC5501
|
46Kb/6P |
VHF to UHF Low-Noise Wide-Band Amplifier Applications
|
2SC5501A
|
470Kb/8P |
VHF to UHF Wide-Band Low-Noise Amplifier Applications
|
2SC5501A
|
55Kb/5P |
VHF to UHF Wide-Band Low-Noise Amplifier Applications
|
ON Semiconductor |
2SC5501A
|
369Kb/8P |
RF Transistor 10V, 70mA, fT=7GHz, NPN Single MCP4
August, 2013 |
2SC5501A-4-TR-E
|
369Kb/8P |
RF Transistor 10V, 70mA, fT=7GHz, NPN Single MCP4
August, 2013 |
Sanyo Semicon Device |
2SC5501A
|
470Kb/8P |
VHF to UHF Wide-Band Low-Noise Amplifier Applications
|
2SC5502
|
48Kb/6P |
High-Frequency Low-Noise Amplifier Applications
|
2SC5503
|
45Kb/6P |
VHF to UHF Low-Noise Wide-Band Amplifier Applications
|
2SC5504
|
48Kb/6P |
UHF to S Band Low-Noise Amplifier Applications
|
Panasonic Semiconductor |
2SC5505
|
72Kb/3P |
Silicon NPN epitaxial planar type
|
Sanyo Semicon Device |
2SC5506
|
41Kb/4P |
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
|
NEC |
2SC5507
|
91Kb/12P |
NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
|
Renesas Technology Corp |
2SC5507
|
300Kb/12P |
NPN SILICON RF TRANSISTOR
2004 |
2SC5507-T2
|
300Kb/12P |
NPN SILICON RF TRANSISTOR
2004 |
NEC |
2SC5507-T2
|
91Kb/12P |
NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
|
Renesas Technology Corp |
2SC5508
|
229Kb/10P |
NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION
|
NEC |
2SC5508
|
106Kb/16P |
NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
|