Manufacturer | Part # | Datasheet | Description |
Hitachi Semiconductor |
2SJ220L
|
171Kb/1P |
SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING
|
2SJ220S
|
171Kb/1P |
SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING
|
2SJ221
|
48Kb/8P |
Silicon P-Channel MOS FET
|
Renesas Technology Corp |
2SJ221
|
81Kb/7P |
Silicon P Channel MOS FET
|
Inchange Semiconductor ... |
2SJ221
|
64Kb/2P |
High Speed Switching
|
Renesas Technology Corp |
2SJ221-E
|
81Kb/7P |
Silicon P Channel MOS FET
|
Hitachi Semiconductor |
2SJ222
|
34Kb/6P |
Silicon P-Channel MOS FET
|
Renesas Technology Corp |
2SJ222
|
82Kb/7P |
Silicon P Channel MOS FET
|
2SJ222-E
|
82Kb/7P |
Silicon P Channel MOS FET
|
Sanyo Semicon Device |
2SJ225
|
82Kb/3P |
Very High-Speed Switching Applications
|
2SJ226
|
78Kb/3P |
Very High-Speed Switching Applications
|
2SJ227
|
78Kb/3P |
Very High-Speed Switching Applications
|
2SJ228
|
81Kb/3P |
Very High-Speed Switching Applications
|
2SJ229
|
79Kb/3P |
Very High-Speed Switching Applications
|
2SJ229
|
88Kb/4P |
Ultrahigh-Speed Switching Applications
|
2SJ229
|
88Kb/4P |
Ultrahigh-Speed Switching Applications
|
Toshiba Semiconductor |
2SJ200
|
181Kb/3P |
P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATION)
|
2SJ200
|
426Kb/5P |
High Power Amplifier Application
|
2SJ200
|
297Kb/5P |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
2SJ200
|
1Mb/73P |
Bipolar Small-Signal Transistors
|