| Manufacturer | Part # | Datasheet | Description |
Fuji Electric |
2SK2850
|
258Kb/12P |
N-Channel Enhancement Mode Power MOSFET
|
Hitachi Semiconductor |
2SK2851
|
50Kb/10P |
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Technology Corp |
2SK2851
|
206Kb/10P |
Silicon N Channel MOS FET High Speed Power Switching
Sep.07,2005 |
|
2SK2851TZ-E
|
206Kb/10P |
Silicon N Channel MOS FET High Speed Power Switching
Sep.07,2005 |
Toshiba Semiconductor |
2SK2854
|
107Kb/2P |
N CHANNEL MOS TYPE (UHF BAND AMPLIFIER APPLICATIONS)
|
|
2SK2854
|
153Kb/4P |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION
|
|
2SK2854
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
|
2SK2854
|
153Kb/4P |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION
|
|
2SK2855
|
107Kb/2P |
N CHANNEL MOS TYPE (UHF BAND AMPLIFIER APPLICATION)
|
|
2SK2855
|
153Kb/4P |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION
|
|
2SK2855
|
153Kb/4P |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION
|
|
2SK2856
|
235Kb/4P |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
|
Renesas Technology Corp |
2SK2857
|
305Kb/10P |
MOS FIELD EFFECT TRANSISTOR
1999 |
VBsemi Electronics Co.,... |
2SK2857
|
1,019Kb/8P |
N-Channel 60-V (D-S) MOSFET
|
Guangdong Kexin Industr... |
2SK2857
|
44Kb/1P |
MOS Field Effect Transistor
|
NEC |
2SK2857
|
62Kb/8P |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
|
Guangdong Kexin Industr... |
2SK2857-HF
|
1Mb/4P |
N-Channel MOSFET
|
Renesas Technology Corp |
2SK2857C
|
196Kb/8P |
N-CHANNEL MOSFET FOR SWITCHING
|
|
2SK2857C-T1-AY
|
196Kb/8P |
N-CHANNEL MOSFET FOR SWITCHING
|
|
2SK2857C-T1-AZ
|
196Kb/8P |
N-CHANNEL MOSFET FOR SWITCHING
|
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