Manufacturer | Part # | Datasheet | Description |
Advanced Power Electron... |
AP9408CGM-HF
|
99Kb/4P |
Simple Drive Requirement
|
AP9408AGH
|
149Kb/5P |
Lower Gate Charge, Simple Drive Requirement
|
SHENZHEN DOINGTER SEMIC... |
AP9408AGH
|
1Mb/4P |
N-Channel MOSFET uses advanced trench technology
|
Advanced Power Electron... |
AP9408AGH
|
149Kb/5P |
Simple Drive Requirement
|
AP9408AGI
|
158Kb/5P |
Fast Switching Performance, Full Isolation Package
|
AP9408AGI
|
158Kb/5P |
Fast Switching Performance
|
AP9408AGM-HF
|
100Kb/4P |
Simple Drive Requirement, Fast Switching Characteristic
|
AP9408AGM-HF
|
100Kb/4P |
Simple Drive Requirement
|
AP9408AGM-HF
|
56Kb/5P |
Fast Switching Characteristic
|
AP9408AGP
|
151Kb/5P |
Lower Gate Charge, Simple Drive Requirement
|
AP9408AGP
|
151Kb/5P |
Simple Drive Requirement
|
AP9408GH
|
105Kb/4P |
Lower Gate Charge, Simple Drive Requirement
|
AP9408GH-HF
|
278Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
AP9408GH
|
105Kb/4P |
Simple Drive Requirement
|
AP9408GJ
|
105Kb/4P |
Lower Gate Charge, Simple Drive Requirement
|
AP9408GJ
|
105Kb/4P |
Simple Drive Requirement
|
AP9408GM-HF
|
64Kb/4P |
Lower Gate Charge, Fast Switching Characteristic
|
SHENZHEN DOINGTER SEMIC... |
AP9408GM-HF
|
1Mb/4P |
N-Channel MOSFET uses advanced trench technology
|
Advanced Power Electron... |
AP9408GM-HF
|
64Kb/4P |
Simple Drive Requirement
|
AP9408GM-HF
|
56Kb/5P |
Fast Switching Characteristic
|