Manufacturer | Part # | Datasheet | Description |
Vishay Siliconix |
BF998RAW-GS08
|
318Kb/10P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Rev. 1.8, 05-Sep-08 |
BF998RA-GS08
|
318Kb/10P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Rev. 1.8, 05-Sep-08 |
BF998RB
|
155Kb/9P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Rev. 4, 23-Jun-99 |
BF998RBW
|
155Kb/9P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Rev. 4, 23-Jun-99 |
BF998RBW
|
318Kb/10P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Rev. 1.8, 05-Sep-08 |
BF998RBW-GS08
|
318Kb/10P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Rev. 1.8, 05-Sep-08 |
BF998RW
|
318Kb/10P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Rev. 1.8, 05-Sep-08 |
BF998RW
|
155Kb/9P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Rev. 4, 23-Jun-99 |
BF998A
|
155Kb/9P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Rev. 4, 23-Jun-99 |
BF998A
|
318Kb/10P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Rev. 1.8, 05-Sep-08 |
BF998A-GS08
|
318Kb/10P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Rev. 1.8, 05-Sep-08 |
BF998B
|
155Kb/9P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Rev. 4, 23-Jun-99 |
Siemens Semiconductor G... |
BF998W
|
30Kb/2P |
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor)
|
Infineon Technologies A... |
BF998W
|
249Kb/6P |
Silicon N-Channel MOSFET Tetrode
Feb-13-2004 |
Quanzhou Jinmei Electro... |
BF998WR
|
82Kb/12P |
N-channel dual-gate MOS-FET
|
NXP Semiconductors |
BF998WR
|
9Mb/130P |
RF Manual 16th edition
June 2012 |
BF998WR
|
94Kb/12P |
N-channel dual-gate MOS-FET
1997 Sep 05 |
Quanzhou Jinmei Electro... |
BF998WR
|
82Kb/12P |
N-channel dual-gate MOS-FET
|
BF998WR_2015
|
82Kb/12P |
N-channel dual-gate MOS-FET
|
Infineon Technologies A... |
BF998
|
93Kb/9P |
Silicon N_Channel MOSFET Tetrode
2007-04-20 |