BS2100F Datasheet, PDF

Manufacturer

Manufacturer	Part #	Datasheet	Description
Rohm	BS2100F	838Kb/19P	Built-in Under Voltage Lockout for Both Channels

Manufacturer	Part #	Datasheet	Description
Rohm	BS2101F	876Kb/23P	High voltage
	BS2101F-E2	876Kb/23P	High voltage
	BS2103F	895Kb/24P	High voltage High & Low-side, Gate Driver
	BS2103F-E2	895Kb/24P	High voltage High & Low-side, Gate Driver
	BS2114F	876Kb/23P	600V High voltage High & Low-side, Gate Driver
	BS2130F-G	1Mb/31P	High Voltage 3 Phase Bridge Driver
	BS2130F-GE2	1Mb/31P	High Voltage 3 Phase Bridge Driver
	BS2132F	2Mb/33P	600V High Voltage 3 Phase Bridge Driver Integrated Bootstrap Diode
Bi technologies	BS2-01	446Kb/9P	BS DIP
Bi technologies	BS2-SE	356Kb/7P	BS DIP
List of Unclassifed Man...	BS20	107Kb/2P	Conduit Accessories
Vestal Electronic Devic...	BS20-720X300	20Kb/1P	Bare Staple Jumper Wire
Vestal Electronic Devic...	BS20-875X175	20Kb/1P	Bare Staple Jumper Wire
List of Unclassifed Man...	BS20-H	107Kb/2P	Conduit Accessories
	BS20-L	107Kb/2P	Conduit Accessories
	BS2011	70Kb/2P	GORE-SHIELD짰 GS2100 EMI Gasket is a conductive, adhesive backed, EMI gasketing material that is moderately soft and is approved for spacefl ight and military applications.
Xtaltq Technologies Co....	BS2016A	231Kb/2P	Typical 2.05 x 1.65 x 0.75 mm ceramic SMD package
Xtaltq Technologies Co....	BS2016AD3I505CN20	231Kb/2P	Typical 2.05 x 1.65 x 0.75 mm ceramic SMD package
Shenzhen Bencent Electr...	BS201N	225Kb/3P	Gas Discharge Tube
NXP Semiconductors	BS208	64Kb/12P	P-channel enhancement mode vertical D-MOS transistor April 1995

BS2100F Datasheet ,PDF