Manufacturer | Part # | Datasheet | Description |
Toshiba Semiconductor |
GT8G131
|
211Kb/6P |
N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)
|
GT8G131
|
185Kb/6P |
Strobe Flash Applications
|
GT8G132
|
338Kb/6P |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
GT8G132
|
187Kb/6P |
Strobe Flash Applications
|
GT8G132
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
GT8G132
|
187Kb/6P |
Strobe Flash Applications
|
GT8G133
|
201Kb/7P |
Strobe Flash Applications
|
GT8G133
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
GT8G136
|
207Kb/6P |
Silicon N Channel IGBT Strobe Flash Applications
|
GT8G136
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
GT8G101
|
835Kb/16P |
Discrete IGBTs
|
GT8G102
|
835Kb/16P |
Discrete IGBTs
|
GT8G103
|
225Kb/4P |
N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)
|
GT8G103
|
408Kb/5P |
STROBE FLASH APPLICATIONS
|
GT8G103
|
835Kb/16P |
Discrete IGBTs
|
GT8G103
|
408Kb/5P |
STROBE FLASH APPLICATIONS
|
GT8G121
|
228Kb/4P |
N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)
|
GT8G121
|
413Kb/5P |
STROBE FLASH APPLICATIONS
|
GT8G121
|
835Kb/16P |
Discrete IGBTs
|
GT8G121
|
413Kb/5P |
STROBE FLASH APPLICATIONS
|