Manufacturer | Part # | Datasheet | Description |
NXP Semiconductors |
PHB110NQ06LT
|
218Kb/13P |
N-channel TrenchMOS logic level FET
Rev. 02-4 March 2010 |
PHB110NQ06LT
|
94Kb/13P |
N-channel TrenchMOS logic level FET
Rev. 01-04 May 2004 |
PHB110NQ08LT
|
91Kb/13P |
N-channel TrenchMOS logic level FET
Rev. 01-29 March 2004 |
Nexperia B.V. All right... |
PHB110NQ08T
|
679Kb/12P |
N-channel TrenchMOS standard level FET
Rev. 02 - 12 October 2009 |
NXP Semiconductors |
PHB110NQ08T
|
181Kb/12P |
N-channel TrenchMOS standard level FET
Rev. 02-12 October 2009 |
PHB110NQ08T
|
89Kb/13P |
N-channel TrenchMOS standard level FET
Rev. 01-29 March 2004 |
PHB119NQ06T
|
94Kb/13P |
N-channel TrenchMOS standard level FET
Rev. 01-05 May 2004 |
PHB119NQ06T
|
191Kb/13P |
N-channel TrenchMOS standard level FET
Rev. 02-15 April 2010 |
PHB11N03LT
|
105Kb/11P |
N-channel TrenchMOS transistor Logic level FET
September 1999 Rev 1.000 |
PHB11N06LT
|
76Kb/9P |
TrenchMOS transistor Logic level FET
September 1998 Rev 1.000 |
PHB11N06LT
|
114Kb/12P |
N-channel TrenchMOS transistor Logic level FET
August 1999 Rev 1.000 |
PHB11N50E
|
102Kb/9P |
PowerMOS transistors Avalanche energy rated
December 1998 Rev 1.000 |
PHB11N50E
|
41Kb/7P |
PowerMOS transistors Avalanche energy rated
January 1998 Rev 1.000 |
PHB100N03LT
|
331Kb/13P |
N-channel enhancement mode field-effect transistor
Rev. 01-07 September 2000 |
PHB101NQ03LT
|
280Kb/13P |
TrenchMOS??logic level FET
Rev. 02-25 February 2003 |
PHB101NQ04T
|
186Kb/12P |
N-channel TrenchMOS standard level FET
Rev. 02-10 March 2009 |
PHB101NQ04T
|
94Kb/13P |
N-channel TrenchMOS standard level FET
Rev. 01-12 May 2004 |
PHB108NQ03LT
|
108Kb/14P |
N-channel TrenchMOS logic level FET
Rev. 03-18 April 2005 |
PHB108NQ03LT
|
269Kb/14P |
TrenchMOS logic level FET
Rev. 02-11 September 2002 |
PHB10N40
|
69Kb/7P |
PowerMOS transistor
April 1997 Rev 1.000 |