Manufacturer | Part # | Datasheet | Description |
Infineon Technologies A... |
PTFA220041MV4R1K
|
331Kb/18P |
High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 ??2200 MHz
Rev. 10.1, 2016-06-01 |
PTFA220041M
|
331Kb/18P |
High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 ??2200 MHz
Rev. 10.1, 2016-06-01 |
PTFA220081M
|
1Mb/17P |
High Power RF LDMOS Field Effect Transistor 8 W, 700-2200 MHz
Rev. 04, 2010-06-09 |
PTFA220121M
|
245Kb/19P |
High Power RF LDMOS Field Effect Transistor 12 W, 700-2200 MHz
Rev. 07, 2010-04-15 |
PTFA220121M
|
381Kb/21P |
High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz
Rev. 10, 2015-10-23 |
Cree, Inc |
PTFA220121M
|
955Kb/21P |
High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz
|
Infineon Technologies A... |
PTFA220121MV4R1K
|
381Kb/21P |
High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz
Rev. 10, 2015-10-23 |
PTFA220121MV4R1KV4XUMA1
|
381Kb/21P |
High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz
Rev. 10, 2015-10-23 |
PTFA220121M
|
381Kb/21P |
High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz
Rev. 10, 2015-10-23 |