PTFA220081M Datasheet, PDF

Manufacturer

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	PTFA220081M	1Mb/17P	High Power RF LDMOS Field Effect Transistor 8 W, 700-2200 MHz Rev. 04, 2010-06-09

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	PTFA220041M	1Mb/18P	High Power RF LDMOS Field Effect Transistor 4 W, 700 - 2200 MHz Rev. 08, 2010-06-07
	PTFA220041M	331Kb/18P	High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 ??2200 MHz Rev. 10.1, 2016-06-01
	PTFA220041MV4R1K	331Kb/18P	High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 ??2200 MHz Rev. 10.1, 2016-06-01
	PTFA220041MV4R1KXUMA1	331Kb/18P	High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 ??2200 MHz Rev. 10.1, 2016-06-01
	PTFA220041M	331Kb/18P	High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 ??2200 MHz Rev. 10.1, 2016-06-01
Cree, Inc	PTFA220121M	955Kb/21P	High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz
Infineon Technologies A...	PTFA220121M	381Kb/21P	High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz Rev. 10, 2015-10-23
	PTFA220121M	245Kb/19P	High Power RF LDMOS Field Effect Transistor 12 W, 700-2200 MHz Rev. 07, 2010-04-15
	PTFA220121MV4R1K	381Kb/21P	High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz Rev. 10, 2015-10-23
	PTFA220121MV4R1KV4XUMA1	381Kb/21P	High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz Rev. 10, 2015-10-23
	PTFA220121M	381Kb/21P	High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz Rev. 10, 2015-10-23

PTFA220081M Datasheet ,PDF