| Manufacturer | Part # | Datasheet | Description |
Infineon Technologies A... |
SPP08P06PG
|
843Kb/10P |
P-Channel Enhancement mode Avalanche rated dv/dt rated
Rev 1.5 2009-04-14 |
VBsemi Electronics Co.,... |
SPP08P06PH
|
955Kb/7P |
P-Channel 60-V (D-S) MOSFET
|
Infineon Technologies A... |
SPP08P06PH
|
484Kb/10P |
SIPMOS횘 Power-Transistor
Rev 1.6 2011-08-31 |
|
SPP08P06P
|
843Kb/10P |
P-Channel Enhancement mode Avalanche rated dv/dt rated
Rev 1.5 2009-04-14 |
|
SPP08N50C3
|
265Kb/13P |
Cool MOS??Power Transistor
2003-06-27 |
Inchange Semiconductor ... |
SPP08N50C3
|
339Kb/2P |
N-Channel MOSFET Transistor
|
Infineon Technologies A... |
SPP08N50C3
|
732Kb/14P |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
Rev. 2.91 2009-11-27 |
|
SPP08N50C3
|
732Kb/14P |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
Rev. 2.91 2009-11-27 |
|
SPP08N80C3
|
398Kb/10P |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology
Rev. 2.9 2008-10-15 |
|
SPP08N80C3
|
490Kb/10P |
CoolMOSTM Power Transistor
Rev. 2.91 2011-09-27 |
|
SPP08N80C3
|
252Kb/12P |
Cool MOS??Power Transistor
2003-07-02 |
Inchange Semiconductor ... |
SPP08N80C3
|
339Kb/2P |
N-Channel MOSFET Transistor
|
Infineon Technologies A... |
SPP08N80C3
|
398Kb/10P |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology
Rev. 2.9 2008-10-15 |
|
SPP08N80C3
|
490Kb/10P |
CoolMOSTM Power Transistor
Rev. 2.91 2011-09-27 |
English ▼ 
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand