Manufacturer | Part # | Datasheet | Description |
SHENZHEN DOINGTER SEMIC... |
SSD50N10-18D
|
1Mb/5P |
N-Channel MOSFET uses advanced SGT technology
|
SeCoS Halbleitertechnol... |
SSD50N10-18D
|
469Kb/4P |
N-Ch Enhancement Mode Power MOSFET
|
VBsemi Electronics Co.,... |
SSD50N03
|
1,019Kb/8P |
N-Channel 30-V (D-S) MOSFET
|
SeCoS Halbleitertechnol... |
SSD50N03-C
|
240Kb/4P |
N-Ch Enhancement Mode Power MOSFET
|
SSD50N03J
|
213Kb/3P |
N-Ch Enhancement Mode Power MOSFET
|
SSD50N03
|
340Kb/4P |
N-Ch Enhancement Mode Power MOSFET
|
SSD50N06-15D
|
387Kb/4P |
N-Ch Enhancement Mode Power MOSFET
|
SHENZHEN DOINGTER SEMIC... |
SSD50N06-15D
|
2Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
SeCoS Halbleitertechnol... |
SSD50N06J
|
396Kb/3P |
N-Ch Enhancement Mode Power MOSFET
|
SSD50N06
|
502Kb/4P |
N-Ch Enhancement Mode Power MOSFET
|
SHENZHEN DOINGTER SEMIC... |
SSD50N08-14D
|
1Mb/4P |
N-Channel MOSFET uses advanced SGT technology
|
SeCoS Halbleitertechnol... |
SSD50N08-14D
|
474Kb/4P |
N-Ch Enhancement Mode Power MOSFET
|
SSD50N08
|
474Kb/4P |
N-Ch Enhancement Mode Power MOSFET
|
Laird Tech Smart Techno... |
SSD50NBT
|
2Mb/45P |
This document describes key hardware aspects of the Laird SSD50NBT system in package
|