| Manufacturer | Part # | Datasheet | Description |
SamHop Microelectronics... |
STS3411A
|
112Kb/7P |
Super high dense cell design for low RDS(ON).
|
|
STS3415
|
100Kb/7P |
Super high dense cell design for low RDS(ON).
|
VBsemi Electronics Co.,... |
STS3415
|
1Mb/9P |
P-Channel 30 V (D-S) MOSFET
|
SamHop Microelectronics... |
STS3417
|
94Kb/7P |
Super high dense cell design for low RDS(ON).
|
VBsemi Electronics Co.,... |
STS3417
|
489Kb/9P |
P-Channel 30 V (D-S) MOSFET
|
SamHop Microelectronics... |
STS3419
|
114Kb/8P |
Super high dense cell design for low RDS(ON).
|
VBsemi Electronics Co.,... |
STS3419
|
501Kb/9P |
P-Channel 30 V (D-S) MOSFET
|
SamHop Microelectronics... |
STS3400
|
716Kb/7P |
N-Channel E nhancement Mode F ield E ffect Trans is tor
|
VBsemi Electronics Co.,... |
STS3400
|
481Kb/9P |
N-Channel 30-V (D-S) MOSFET
|
SamHop Microelectronics... |
STS3401
|
680Kb/7P |
P-Channel E nhancement Mode MOSFET
|
VBsemi Electronics Co.,... |
STS3401
|
490Kb/9P |
P-Channel 30 V (D-S) MOSFET
|
|
STS3401A
|
501Kb/9P |
P-Channel 30 V (D-S) MOSFET
|
SamHop Microelectronics... |
STS3401A
|
101Kb/7P |
Super high dense cell design for low RDS(ON).
|
VBsemi Electronics Co.,... |
STS3402
|
489Kb/9P |
N-Channel 30-V (D-S) MOSFET
|
SamHop Microelectronics... |
STS3402
|
718Kb/7P |
N-Channel E nhancement Mode Field Effect Transistor
|
|
STS3403
|
700Kb/7P |
P-Channel E nhancement Mode MOSFET
|
VBsemi Electronics Co.,... |
STS3403
|
490Kb/9P |
P-Channel 30 V (D-S) MOSFET
|
SamHop Microelectronics... |
STS3404
|
913Kb/8P |
N-Channel E nhancement Mode Field Effect Transistor
|
VBsemi Electronics Co.,... |
STS3404
|
481Kb/9P |
N-Channel 30-V (D-S) MOSFET
|
SamHop Microelectronics... |
STS3405
|
826Kb/8P |
P-Channel E nhancement Mode Field Effect Transistor
|
English ▼ 
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand