Manufacturer | Part # | Datasheet | Description |
Toshiba Semiconductor |
TIM7785-16SL
|
140Kb/4P |
MICROWAVE POWER GaAs FET
|
TIM7785-12UL
|
46Kb/4P |
BROAD BAND INTERNALLY MATCHED FET
|
TIM7785-12UL
|
144Kb/4P |
HIGH POWER P1dB=41.5dBm at 7.7GHz to 8.5GHz
|
TIM7785-25UL
|
144Kb/4P |
HIGH POWER P1dB=44.5dBm at 7.7GHz to 8.5GHz
|
TIM7785-30SL
|
519Kb/4P |
MICROWAVE POWER GaAs FET
|
TIM7785-30SL
|
164Kb/5P |
MICROWAVE POWER GaAs FET
|
TIM7785-30SL
|
519Kb/4P |
MICROWAVE POWER GaAs FET
|
TIM7785-30UL
|
156Kb/2P |
MICROWAVE POWER GaAs FET
|
TIM7785-35SL
|
177Kb/5P |
MICROWAVE POWER GaAs FET
|
TIM7785-35SL
|
517Kb/4P |
MICROWAVE POWER GaAs FET
|
TIM7785-35SL
|
517Kb/4P |
MICROWAVE POWER GaAs FET
|
TIM7785-45SL
|
518Kb/4P |
MICROWAVE POWER GaAs FET
|
TIM7785-4UL
|
72Kb/4P |
MICROWAVE POWER GaAs FET
|
TIM7785-4UL
|
144Kb/4P |
HIGH POWER P1dB=36.5dBm at 7.7GHz to 8.5GHz
|
TIM7785-60SL
|
81Kb/4P |
MICROWAVE POWER GaAs FET
|
TIM7785-60SL
|
156Kb/4P |
IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level
|
TIM7785-60ULA
|
307Kb/6P |
MICROWAVE POWER GaAs FET
1_20190927_No1121 |
TIM7785-6UL
|
47Kb/4P |
MICROWAVE POWER GaAs FET
|
TIM7785-6UL
|
144Kb/4P |
HIGH POWER P1dB=38.5dBm at 7.7GHz to 8.5GHz
|
TIM7785-8SL
|
266Kb/4P |
MICROWAVE POWER GaAs FET
|