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ESD5Z5.0T1G Datasheet (PDF) - ON Semiconductor

ESD5Z5.0T1G Datasheet PDF - ON Semiconductor
Part # ESD5Z5.0T1G
Download  ESD5Z5.0T1G Download

File Size   111.38 Kbytes
Page   4 Pages
Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor
Description Transient Voltage Suppressors Micro?뭁ackaged Diodes for ESD Protection

ESD5Z5.0T1G Datasheet (PDF)

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ESD5Z5.0T1G Datasheet PDF - ON Semiconductor

Part # ESD5Z5.0T1G
Download  ESD5Z5.0T1G Click to download

File Size   111.38 Kbytes
Page   4 Pages
Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor
Description Transient Voltage Suppressors Micro?뭁ackaged Diodes for ESD Protection

ESD5Z5.0T1G Datasheet (HTML) - ON Semiconductor

ESD5Z5.0T1G Datasheet HTML 1Page - ON Semiconductor ESD5Z5.0T1G Datasheet HTML 2Page - ON Semiconductor ESD5Z5.0T1G Datasheet HTML 3Page - ON Semiconductor ESD5Z5.0T1G Datasheet HTML 4Page - ON Semiconductor



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About ON Semiconductor


ON Semiconductor is a publicly traded company that designs, develops, and manufactures a wide range of semiconductor products for various applications, including automotive, computing, consumer, industrial, and communications markets.
The company was founded in 1999 and is headquartered in Phoenix, Arizona.
ON Semiconductor offers a broad portfolio of power management, analog, and discrete semiconductors, including power MOSFETs, diodes, rectifiers, and voltage regulators, among others.
The company's products are designed to be energy efficient, reliable, and cost-effective, and are used in a variety of applications, including portable electronics, industrial automation systems, renewable energy systems, and automotive electronics.
ON Semiconductor is dedicated to innovation and customer satisfaction, and is committed to providing its customers with the best semiconductor solutions to meet their needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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