V30120S-E3 Datasheet(PDF) - Vishay Siliconix

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V30120S-E3 Datasheet (PDF) - Vishay Siliconix

V30120S-E3 Datasheet PDF - Vishay Siliconix


Part #	V30120S-E3

Download	V30120S-E3 Download

File Size	731.92 Kbytes

Page	5 Pages

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

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Description

High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A

V30120S-E3 Datasheet (PDF)

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V30120S-E3 Datasheet PDF - Vishay Siliconix


Part #	V30120S-E3

Download	V30120S-E3 Click to download

File Size	731.92 Kbytes

Page	5 Pages

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

Description	High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A

V30120S-E3 Datasheet (HTML) - Vishay Siliconix

V30120S-E3 Product details

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified

Similar Part No. - V30120S-E3

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	V30120S-E3	216Kb / 6P	High Voltage Trench MOS Barrier Schottky Rectifier 01-Jan-2022
	V30120S-E3-4W	161Kb / 5P	High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 24-Jun-09
	V30120S-E3/45	136Kb / 5P	High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 05-Nov-13
	V30120S-E3/4W	165Kb / 5P	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A Revision: 19-May-08
	V30120S-E3/4W	162Kb / 5P	High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 24-Jun-09

Similar Description - V30120S-E3

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	V30120S	165Kb / 5P	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A Revision: 19-May-08
	VB30120S-M3	90Kb / 4P	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A Revision: 14-May-13
	V60DM120C-M3	102Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A Revision: 22-Apr-15
	V40120C	167Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A Revision: 19-May-08
	V60M120C-M3	129Kb / 4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A Revision: 10-May-16
	V10150S	166Kb / 5P	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A Revision: 19-May-08
	V10150S	156Kb / 5P	High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A Revision: 13-Aug-13
	V20120SG	166Kb / 5P	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A Revision: 19-May-08
	VB30100SG-M3	90Kb / 4P	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A Revision: 15-May-13
	V20100SG	159Kb / 5P	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Revision: 31-Jul-08
	V20120S	166Kb / 5P	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Revision: 19-May-08

About Vishay Siliconix

Vishay Siliconix is a subsidiary of Vishay Intertechnology, a global manufacturer of passive electronic components.
Vishay Siliconix specializes in the design, manufacturing, and marketing of power MOSFETs, IGBTs, and other power semiconductors.
The company was founded in 1962 and is headquartered in Santa Clara, California.
Vishay Siliconix provides power solutions for a variety of applications, including renewable energy systems, industrial equipment, computing and telecommunications, and automotive electronics.
The company's products are designed for high efficiency, low power consumption, and high reliability, and are manufactured in state-of-the-art facilities using advanced fabrication processes.
With a focus on innovation and customer satisfaction, Vishay Siliconix is committed to providing its customers with the best power management solutions to meet their needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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