Manufacturer | Part # | Datasheet | Description |
NEC |
GA1F4N
|
181Kb/4P |
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR?
|
Renesas Technology Corp |
GA1F4N
|
304Kb/6P |
SILICON TRANSISTOR
1988 |
NEC |
GA1F4Z
|
167Kb/4P |
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR?
|
Renesas Technology Corp |
GA1F4Z
|
290Kb/6P |
SILICON TRANSISTOR
1988 |
Carling Technologies |
GA1-B0-24-620-11-DC
|
2Mb/4P |
Circuit Breaker
|
Microsemi Corporation |
GA100
|
202Kb/4P |
SCRs Nuclear Radiation Resistant, Planar
|
CUI INC |
GA1006
|
238Kb/2P |
Square frame paper cone - alnico magnet
|
CUI Devices |
GA1006
|
474Kb/3P |
SPEAKER
08/05/2022 |
Inchange Semiconductor ... |
GA100JT12
|
540Kb/4P |
isc N-Channel Transistor
2023-9-26 |
GeneSiC Semiconductor, ... |
GA100JT12-227
|
1Mb/12P |
OFF Silicon Carbide Junction Transistor
|
Inchange Semiconductor ... |
GA100JT12-ISCFM8004
|
365Kb/5P |
SiC MOSFET Power Module
2023-9-26 |
GeneSiC Semiconductor, ... |
GA100JT17-227
|
1Mb/12P |
OFF Silicon Carbide Junction Transistor
|
Inchange Semiconductor ... |
GA100JT17-ISCFM8005
|
365Kb/5P |
SiC MOSFET Power Module
2023-9-26 |
International Rectifier |
GA100NA60U
|
300Kb/10P |
INSULATED GATE BIPOLAR TRANSISTOR
|
Vishay Siliconix |
GA100NA60U
|
252Kb/10P |
Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A
Revision: 22-Jul-10 |
GA100NA60UP
|
252Kb/10P |
Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A
Revision: 22-Jul-10 |
GeneSiC Semiconductor, ... |
GA100SBJT12-FR4
|
533Kb/6P |
Double Pulse Test Board
|
GA100SICP12-227
|
258Kb/9P |
Transistor/Schottky Diode Co-pack
|
GA100SICP12-227
|
1Mb/13P |
Silicon Carbide Junction Transistor/Schottky Diode Co-pack
|
International Rectifier |
GA100TS120U
|
269Kb/10P |
HALF-BRIDGE IGBT INT-A-PAK
|